F22NM60-VB Product details
Product introduction:
**F22NM60-VB** is a high-voltage, high-power N-Channel MOSFET in a TO220F package using SJ_Multi-EPI technology. Designed for applications requiring high voltage and medium current, this MOSFET has a drain-source voltage (VDS) of up to 650V and a maximum drain current (ID) of 20A. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) is 160mΩ at VGS=10V, providing the system with lower power consumption and high-efficiency switching performance, suitable for switching and control requirements in high-voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: F22NM60-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
**F22NM60-VB**'s high voltage and high power characteristics make it of great application value in many fields and modules. Here are some specific application examples:
1. **Power converter**: In high voltage power converters, such as power adapters and high voltage DC-DC converters, F22NM60-VB can handle voltages up to 650V, providing stable and reliable switching control for the system. Its high voltage tolerance and moderate on-resistance make it suitable for power switching and protection functions.
2. **High voltage switching circuit**: In high voltage switching circuits, such as high voltage switch mode power supplies (SMPS) and power inverters, F22NM60-VB can effectively handle high voltage and high power requirements, ensuring the reliability and efficiency of the circuit, especially in the field of power management and power conversion.
3. **Industrial Equipment**: In industrial equipment, such as motor drives and power amplifiers, the F22NM60-VB can be used to control the switching of high-voltage loads, provide stable current support and efficient switching operation, and enhance the performance and reliability of the equipment.
4. **Power Conversion Module**: In power conversion modules, such as inverters for wind or solar power generation systems, the F22NM60-VB is able to handle high voltage inputs and perform efficient power conversion and regulation to improve the overall efficiency and stability of the system.
5. **Battery Management System**: In high-voltage battery management systems, this MOSFET can be used for battery switching control and protection, especially for handling high voltages during battery charging and discharging to ensure battery safety and long life.
The high voltage tolerance and high power handling capabilities of the F22NM60-VB make it very valuable in handling high voltage and high power applications, and it is widely used in electronic devices and systems that require reliable switching control and high voltage management.
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