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F21NM50N-VB Product details
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F21NM50N-VB Product Introduction
**F21NM50N-VB** is a high voltage N-channel MOSFET in TO220F package and manufactured using SJ_Multi-EPI technology. This MOSFET has a drain-source voltage (VDS) of up to 650V and a drain current (ID) of up to 20A. Its moderate on-resistance (RDS(ON)) enables it to perform well in high voltage applications. F21NM50N-VB is suitable for switching and control applications that require high voltage and high reliability, especially in the field of power electronics.
**F21NM50N-VB** is a high voltage N-channel MOSFET in TO220F package and manufactured using SJ_Multi-EPI technology. This MOSFET has a drain-source voltage (VDS) of up to 650V and a drain current (ID) of up to 20A. Its moderate on-resistance (RDS(ON)) enables it to perform well in high voltage applications. F21NM50N-VB is suitable for switching and control applications that require high voltage and high reliability, especially in the field of power electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: F21NM50N-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: F21NM50N-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High voltage switch**: The high drain-source voltage of F21NM50N-VB makes it very suitable for high voltage switching applications. It can work stably in high voltage environment and is suitable for power converters and high voltage switching power supplies. This MOSFET is often used in power modules that require high voltage isolation, such as switching power supplies (SMPS) and AC-DC converters.
2. **Power management**: In the field of power management, F21NM50N-VB can be used as a power switch to control the flow and distribution of current. It is suitable for switch and control modules in high power power systems, such as power management systems and load switch modules, and can provide stable performance in high voltage environments.
3. **Industrial equipment**: Due to its high withstand voltage and good on-resistance characteristics, F21NM50N-VB is suitable for high voltage switching applications in various industrial equipment. It can be used in industrial power supplies, drivers and power conditioning modules to ensure efficient operation and long life of industrial equipment.
4. **Power Electronics**: In the field of power electronics, the high voltage and moderate on-resistance of the F21NM50N-VB make it suitable for use in high-voltage power converters and inverters. This includes switching applications in solar inverters, wind power generation systems, and other high-power power electronic devices, providing reliable power conversion and control functions.
1. **High voltage switch**: The high drain-source voltage of F21NM50N-VB makes it very suitable for high voltage switching applications. It can work stably in high voltage environment and is suitable for power converters and high voltage switching power supplies. This MOSFET is often used in power modules that require high voltage isolation, such as switching power supplies (SMPS) and AC-DC converters.
2. **Power management**: In the field of power management, F21NM50N-VB can be used as a power switch to control the flow and distribution of current. It is suitable for switch and control modules in high power power systems, such as power management systems and load switch modules, and can provide stable performance in high voltage environments.
3. **Industrial equipment**: Due to its high withstand voltage and good on-resistance characteristics, F21NM50N-VB is suitable for high voltage switching applications in various industrial equipment. It can be used in industrial power supplies, drivers and power conditioning modules to ensure efficient operation and long life of industrial equipment.
4. **Power Electronics**: In the field of power electronics, the high voltage and moderate on-resistance of the F21NM50N-VB make it suitable for use in high-voltage power converters and inverters. This includes switching applications in solar inverters, wind power generation systems, and other high-power power electronic devices, providing reliable power conversion and control functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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