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F20NM60A-VB Product details
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F20NM60A-VB MOSFET Product Introduction
**F20NM60A-VB** is a high-voltage, high-performance N-Channel MOSFET in a TO220F package. This MOSFET is designed to handle drain-source voltages (V_DS) up to 650V and supports gate-source voltages (V_GS) of ±30V. Its threshold voltage (V_th) is 3.5V, ensuring that it can be effectively turned on at the appropriate gate voltage. Using SJ_Multi-EPI technology, the F20NM60A-VB has a lower on-resistance (R_DS(ON)) of 160mΩ at a gate voltage of 10V and a maximum drain current (I_D) of 20A. The device is designed for applications in high voltage environments, providing stable performance and reliable operation.
**F20NM60A-VB** is a high-voltage, high-performance N-Channel MOSFET in a TO220F package. This MOSFET is designed to handle drain-source voltages (V_DS) up to 650V and supports gate-source voltages (V_GS) of ±30V. Its threshold voltage (V_th) is 3.5V, ensuring that it can be effectively turned on at the appropriate gate voltage. Using SJ_Multi-EPI technology, the F20NM60A-VB has a lower on-resistance (R_DS(ON)) of 160mΩ at a gate voltage of 10V and a maximum drain current (I_D) of 20A. The device is designed for applications in high voltage environments, providing stable performance and reliable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The F20NM60A-VB excels in high-voltage power switch applications, such as in high-voltage DC-DC converters and AC-DC power supplies. Its high withstand voltage capability and relatively low on-resistance enable it to handle high voltage and high power loads, ensuring system stability and efficiency.
2. **Motor control**: In industrial motor control systems, the F20NM60A-VB can be used to control the switching of high-voltage motors. Its high drain-source voltage and on-resistance characteristics can handle high current and high voltage requirements, providing stable switching control for motors.
3. **Power inverter**: In power inverter applications, especially in inverters for solar photovoltaic systems, the F20NM60A-VB's high voltage handling capability and high power carrying capacity make it suitable for converting and regulating electrical energy, optimizing system performance and ensuring reliability.
4. **Power Regulator**: In power regulator modules, this MOSFET can be used for switching tasks under high voltage and high power conditions. Its low on-resistance helps improve the efficiency of the power regulator and reduce power losses.
These application examples show the excellent performance of the F20NM60A-VB in high voltage and high power environments, especially suitable for power management, motor control and energy conversion.
1. **High-voltage power switch**: The F20NM60A-VB excels in high-voltage power switch applications, such as in high-voltage DC-DC converters and AC-DC power supplies. Its high withstand voltage capability and relatively low on-resistance enable it to handle high voltage and high power loads, ensuring system stability and efficiency.
2. **Motor control**: In industrial motor control systems, the F20NM60A-VB can be used to control the switching of high-voltage motors. Its high drain-source voltage and on-resistance characteristics can handle high current and high voltage requirements, providing stable switching control for motors.
3. **Power inverter**: In power inverter applications, especially in inverters for solar photovoltaic systems, the F20NM60A-VB's high voltage handling capability and high power carrying capacity make it suitable for converting and regulating electrical energy, optimizing system performance and ensuring reliability.
4. **Power Regulator**: In power regulator modules, this MOSFET can be used for switching tasks under high voltage and high power conditions. Its low on-resistance helps improve the efficiency of the power regulator and reduce power losses.
These application examples show the excellent performance of the F20NM60A-VB in high voltage and high power environments, especially suitable for power management, motor control and energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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