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F20NM50FD-VB Product details
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F20NM50FD-VB MOSFET Product Introduction
The F20NM50FD-VB is a high voltage, high current unipolar N-channel MOSFET in a TO220F package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) handling capability of ±30V, making it ideal for high voltage applications. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable switching at relatively low gate voltages. The F20NM50FD-VB uses SJ_Multi-EPI technology, providing a medium on-resistance of 160mΩ at VGS=10V and a drain current (ID) of up to 20A. It is designed to handle higher voltage and current loads, and is suitable for power management and switching applications that require high voltage resistance and high reliability.
The F20NM50FD-VB is a high voltage, high current unipolar N-channel MOSFET in a TO220F package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) handling capability of ±30V, making it ideal for high voltage applications. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable switching at relatively low gate voltages. The F20NM50FD-VB uses SJ_Multi-EPI technology, providing a medium on-resistance of 160mΩ at VGS=10V and a drain current (ID) of up to 20A. It is designed to handle higher voltage and current loads, and is suitable for power management and switching applications that require high voltage resistance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
F20NM50FD-VB MOSFET Detailed parameter description
- **Package type (Package):** TO220F
- **Configuration (Configuration):** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Drain current (ID):** 20A
- **Technology type (Technology):** SJ_Multi-EPI
- **Package type (Package):** TO220F
- **Configuration (Configuration):** Single N-channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 160mΩ @ VGS=10V
- **Drain current (ID):** 20A
- **Technology type (Technology):** SJ_Multi-EPI
Domain and module applications：
F20NM50FD-VB MOSFET Applications and Module Examples
The high voltage and high current handling capabilities of the F20NM50FD-VB MOSFET enable it to excel in multiple high voltage applications. Here are a few typical application scenarios:
1. **High-Voltage Switching Power Supplies:** Due to its drain-source voltage capability of up to 650V, the F20NM50FD-VB is suitable for high-voltage switching power supply designs, such as industrial power supplies, inverters, and high-power power adapters. It can work reliably in high voltage environments, ensuring the stability and efficiency of the power supply system.
2. **Motor Drives:** In motor control applications that require high voltage and high current, such as industrial motor drive systems and electric vehicle drive systems, the F20NM50FD-VB is able to provide strong current switching capabilities and handle high voltage loads, ensuring the efficiency and reliability of motor control.
3. **Inverters and Power Converters:** The high voltage tolerance and high drain current of F20NM50FD-VB make it very suitable for solar inverters, wind power inverters and other power converter applications. Its reliability and stability are particularly important in these applications that require high voltage and high efficiency.
4. **Power Management Systems:** In high-voltage power management and battery management systems, the high voltage and high current capabilities of F20NM50FD-VB can meet a variety of complex power management needs, including high-voltage load switching and efficient power distribution solutions.
The high performance characteristics of F20NM50FD-VB MOSFET make it ideal in high-voltage, high-power applications, providing a reliable solution for a variety of power and load switching occasions.
The high voltage and high current handling capabilities of the F20NM50FD-VB MOSFET enable it to excel in multiple high voltage applications. Here are a few typical application scenarios:
1. **High-Voltage Switching Power Supplies:** Due to its drain-source voltage capability of up to 650V, the F20NM50FD-VB is suitable for high-voltage switching power supply designs, such as industrial power supplies, inverters, and high-power power adapters. It can work reliably in high voltage environments, ensuring the stability and efficiency of the power supply system.
2. **Motor Drives:** In motor control applications that require high voltage and high current, such as industrial motor drive systems and electric vehicle drive systems, the F20NM50FD-VB is able to provide strong current switching capabilities and handle high voltage loads, ensuring the efficiency and reliability of motor control.
3. **Inverters and Power Converters:** The high voltage tolerance and high drain current of F20NM50FD-VB make it very suitable for solar inverters, wind power inverters and other power converter applications. Its reliability and stability are particularly important in these applications that require high voltage and high efficiency.
4. **Power Management Systems:** In high-voltage power management and battery management systems, the high voltage and high current capabilities of F20NM50FD-VB can meet a variety of complex power management needs, including high-voltage load switching and efficient power distribution solutions.
The high performance characteristics of F20NM50FD-VB MOSFET make it ideal in high-voltage, high-power applications, providing a reliable solution for a variety of power and load switching occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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