F20NM50D-VB Product details
Product introduction:
The F20NM50D-VB is a high voltage N-channel MOSFET packaged in TO220F, designed for high voltage, high power applications. It has a drain-source voltage (VDS) of 650V and is suitable for power switching applications that require high voltage tolerance. The gate-source voltage (VGS) of this MOSFET is ±30V and the threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at the appropriate gate-source voltage. The on-resistance (RDS(ON)) of the F20NM50D-VB is 160mΩ at VGS of 10V, and the maximum continuous drain current (ID) is 20A. Using SJ_Multi-EPI technology, the F20NM50D-VB provides excellent high-voltage performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
F20NM50D-VB MOSFET is widely used in high voltage and high power applications due to its high voltage tolerance and reliability:
1. **High voltage power switch**: F20NM50D-VB is suitable for high voltage power switch systems, such as high voltage DC-DC converters and switching power supplies. Its 650V drain-source voltage enables it to operate stably in high voltage environments, while its lower on-resistance improves switching efficiency.
2. **Power inverter**: In power inverter applications, F20NM50D-VB can be used for high voltage switching, conversion and regulation of power. Its high voltage tolerance and stable switching characteristics are essential to ensure the reliability of the inverter.
3. **Electrical equipment protection**: In high voltage electrical equipment, F20NM50D-VB can be used as a protection switch to prevent damage to the equipment due to overvoltage or short circuit conditions. Its high voltage resistance and low on-resistance can ensure the safety and reliability of the equipment.
4. **Industrial power supply**: In industrial power supply systems, F20NM50D-VB can be used as a high-voltage switching element for switching and controlling power supplies. Its high voltage and current handling capabilities can meet the needs of high-power switches in industrial applications.
5. **Household appliances**: In high-power household appliances, such as high-voltage electric heaters or motor control systems, F20NM50D-VB can stably handle high voltage and high current to ensure efficient and safe operation of the equipment.
In summary, F20NM50D-VB MOSFET is widely used in high-voltage and high-power applications such as high-voltage power switches, power inverters, electrical equipment protection, industrial power supplies and household appliances due to its high voltage tolerance, low on-resistance and reliability.
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