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F20NM50D-VB Product details

Product introduction:

F20NM50D-VB MOSFET Product Introduction

The F20NM50D-VB is a high voltage N-channel MOSFET packaged in TO220F, designed for high voltage, high power applications. It has a drain-source voltage (VDS) of 650V and is suitable for power switching applications that require high voltage tolerance. The gate-source voltage (VGS) of this MOSFET is ±30V and the threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at the appropriate gate-source voltage. The on-resistance (RDS(ON)) of the F20NM50D-VB is 160mΩ at VGS of 10V, and the maximum continuous drain current (ID) is 20A. Using SJ_Multi-EPI technology, the F20NM50D-VB provides excellent high-voltage performance and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
F20NM50D-VB Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules of F20NM50D-VB

F20NM50D-VB MOSFET is widely used in high voltage and high power applications due to its high voltage tolerance and reliability:

1. **High voltage power switch**: F20NM50D-VB is suitable for high voltage power switch systems, such as high voltage DC-DC converters and switching power supplies. Its 650V drain-source voltage enables it to operate stably in high voltage environments, while its lower on-resistance improves switching efficiency.

2. **Power inverter**: In power inverter applications, F20NM50D-VB can be used for high voltage switching, conversion and regulation of power. Its high voltage tolerance and stable switching characteristics are essential to ensure the reliability of the inverter.

3. **Electrical equipment protection**: In high voltage electrical equipment, F20NM50D-VB can be used as a protection switch to prevent damage to the equipment due to overvoltage or short circuit conditions. Its high voltage resistance and low on-resistance can ensure the safety and reliability of the equipment.

4. **Industrial power supply**: In industrial power supply systems, F20NM50D-VB can be used as a high-voltage switching element for switching and controlling power supplies. Its high voltage and current handling capabilities can meet the needs of high-power switches in industrial applications.

5. **Household appliances**: In high-power household appliances, such as high-voltage electric heaters or motor control systems, F20NM50D-VB can stably handle high voltage and high current to ensure efficient and safe operation of the equipment.

In summary, F20NM50D-VB MOSFET is widely used in high-voltage and high-power applications such as high-voltage power switches, power inverters, electrical equipment protection, industrial power supplies and household appliances due to its high voltage tolerance, low on-resistance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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