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F20NK50Z-VB Product details
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Product Introduction:
F20NK50Z-VB is a single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. The device has a rated drain-source voltage of 650V and a gate-source voltage range of ±30V, and adopts SJ_Multi-EPI technology. F20NK50Z-VB has high voltage withstand capability and relatively low on-resistance, suitable for various high voltage switching and power management applications.
F20NK50Z-VB is a single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. The device has a rated drain-source voltage of 650V and a gate-source voltage range of ±30V, and adopts SJ_Multi-EPI technology. F20NK50Z-VB has high voltage withstand capability and relatively low on-resistance, suitable for various high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules:
1. **High voltage switch**: The F20NK50Z-VB is suitable for high voltage switching applications, such as in high voltage DC-DC converters and switching power supplies. Its high drain-source voltage capability allows stable operation in high voltage environments, while the relatively low on-resistance helps reduce power losses and improve the overall efficiency of the system.
2. **Power management system**: In power management and control systems, such as power supply and load regulation modules, the high withstand voltage capability and low on-resistance of the F20NK50Z-VB enable it to effectively control power under harsh voltage conditions, ensuring system stability and reliability.
3. **Motor drive circuit**: In high voltage motor drive applications, such as for high voltage DC motors or industrial motor control, the F20NK50Z-VB is able to withstand high voltage operation while providing stable current control, suitable for a variety of industrial drive systems.
4. **Power protection circuit**: This MOSFET is also suitable for use in power protection circuits, such as overvoltage protection and overcurrent protection. Its high drain-source voltage capability enables it to effectively handle power anomaly conditions, protecting the system from excessive voltage and current.
1. **High voltage switch**: The F20NK50Z-VB is suitable for high voltage switching applications, such as in high voltage DC-DC converters and switching power supplies. Its high drain-source voltage capability allows stable operation in high voltage environments, while the relatively low on-resistance helps reduce power losses and improve the overall efficiency of the system.
2. **Power management system**: In power management and control systems, such as power supply and load regulation modules, the high withstand voltage capability and low on-resistance of the F20NK50Z-VB enable it to effectively control power under harsh voltage conditions, ensuring system stability and reliability.
3. **Motor drive circuit**: In high voltage motor drive applications, such as for high voltage DC motors or industrial motor control, the F20NK50Z-VB is able to withstand high voltage operation while providing stable current control, suitable for a variety of industrial drive systems.
4. **Power protection circuit**: This MOSFET is also suitable for use in power protection circuits, such as overvoltage protection and overcurrent protection. Its high drain-source voltage capability enables it to effectively handle power anomaly conditions, protecting the system from excessive voltage and current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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