F1S70N06-VB Product details
Product introduction:
**Model: F1S70N06-VB**
**Package: TO263**
**Configuration: Unipolar N-channel MOSFET**
**VDS: 60V**
**VGS: ±20V**
**Vth: 1.7V**
**RDS(ON) @ VGS=4.5V: 12mΩ**
**RDS(ON) @ VGS=10V: 11mΩ**
**ID: 75A**
**Technology: Trench Technology**
The F1S70N06-VB is a high performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its drain-source voltage (VDS) is 60V, which is suitable for operation in a variety of power supply environments. This MOSFET has low on-resistance, can handle currents up to 75A, and uses Trench technology to achieve excellent switching performance and high efficiency. It is widely used in power management, motor drive and various high-power electronic devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package:** TO263
- **Configuration:** Unipolar N-channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):** 12mΩ @ VGS=4.5V, 11mΩ @ VGS=10V
- **Drain current (ID):** 75A
- **Technology:** Trench technology
Domain and module applications:
1. **Power converters:** The F1S70N06-VB is suitable for power converters and DC-DC converters due to its low on-resistance and high current handling capability. This MOSFET can efficiently control current, reduce power consumption, and improve system efficiency, especially in applications with high power and high current requirements.
2. **Motor drive:** In motor drive modules, the F1S70N06-VB provides high current carrying capacity and low on-resistance, making it ideal for motor control and drive systems. Its performance can effectively improve the starting, running and speed regulation efficiency of the motor.
3. **Automotive electronics:** In automotive electronics applications, the F1S70N06-VB can be used as a power switch and load switch, and is suitable for applications in modules such as automotive power management systems, power window controls, and power seat drives. Its high current handling capability and low power consumption ensure stable automotive electronic performance.
4. **Communication equipment:** For power management and switch modules in communication equipment, F1S70N06-VB can handle high current loads to ensure stable operation of the equipment in high power environments. Its efficient switching performance and low on-resistance are suitable for base station power supplies and power modules for network equipment.
5. **LED drive and lighting systems:** F1S70N06-VB performs well in LED drive and lighting systems, providing efficient current control and optimizing the performance of LED drive power supplies. Its low on-resistance and high current capability are suitable for various LED lighting and dimming applications, improving the overall efficiency and reliability of the system.
With its high current handling capability, low on-resistance and excellent switching performance, F1S70N06-VB provides strong support and optimized solutions for power conversion, motor drive, automotive electronics, communication equipment, and LED lighting.
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