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F1S60P03-VB Product details
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F1S60P03-VB MOSFET Product Introduction
**F1S60P03-VB** is a high-performance P-Channel MOSFET in a TO263 package. This MOSFET is designed to handle drain-source voltages (V_DS) up to -30V and supports gate-source voltages (V_GS) of ±20V. Its threshold voltage (V_th) is -2.5V, ensuring that it can be effectively turned on at the appropriate gate voltage. Using Trench technology, the F1S60P03-VB has a very low on-resistance (R_DS(ON)), which is 11mΩ at a gate voltage of 4.5V and 8mΩ at a gate voltage of 10V. Its maximum drain current (I_D) is -75A, making it suitable for high current and high power P-Channel MOSFET applications.
**F1S60P03-VB** is a high-performance P-Channel MOSFET in a TO263 package. This MOSFET is designed to handle drain-source voltages (V_DS) up to -30V and supports gate-source voltages (V_GS) of ±20V. Its threshold voltage (V_th) is -2.5V, ensuring that it can be effectively turned on at the appropriate gate voltage. Using Trench technology, the F1S60P03-VB has a very low on-resistance (R_DS(ON)), which is 11mΩ at a gate voltage of 4.5V and 8mΩ at a gate voltage of 10V. Its maximum drain current (I_D) is -75A, making it suitable for high current and high power P-Channel MOSFET applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2.5V
- **On-resistance (R_DS(ON))**:
- 11mΩ @ V_GS = 4.5V
- 8mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -75A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2.5V
- **On-resistance (R_DS(ON))**:
- 11mΩ @ V_GS = 4.5V
- 8mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -75A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: F1S60P03-VB is very effective in power management systems, such as used as a P-Channel switch in switching power supplies and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to effectively control the flow of power, reduce power loss, and improve system efficiency.
2. **Battery protection circuit**: In battery management systems, this MOSFET is suitable for battery protection circuits. Its high current capability and low on-resistance can provide efficient current switching and protection functions to prevent overcharging and over-discharging, and extend battery life.
3. **Load switch**: In various load switch applications, F1S60P03-VB can be used for switching control of high current loads. Its excellent current handling capability and low on-resistance enable it to handle switching operations of large current loads, ensuring system stability and reliability.
4. **Power Converters**: In power converter modules, such as inverters and power regulators, the F1S60P03-VB efficiently handles the switching tasks of power supplies. Its high current capability and low on-resistance help improve the overall efficiency and performance of power converters.
These application examples demonstrate the superior performance of the F1S60P03-VB in high current and high power applications, especially in areas such as power management, battery protection, and load switching.
1. **Power management**: F1S60P03-VB is very effective in power management systems, such as used as a P-Channel switch in switching power supplies and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to effectively control the flow of power, reduce power loss, and improve system efficiency.
2. **Battery protection circuit**: In battery management systems, this MOSFET is suitable for battery protection circuits. Its high current capability and low on-resistance can provide efficient current switching and protection functions to prevent overcharging and over-discharging, and extend battery life.
3. **Load switch**: In various load switch applications, F1S60P03-VB can be used for switching control of high current loads. Its excellent current handling capability and low on-resistance enable it to handle switching operations of large current loads, ensuring system stability and reliability.
4. **Power Converters**: In power converter modules, such as inverters and power regulators, the F1S60P03-VB efficiently handles the switching tasks of power supplies. Its high current capability and low on-resistance help improve the overall efficiency and performance of power converters.
These application examples demonstrate the superior performance of the F1S60P03-VB in high current and high power applications, especially in areas such as power management, battery protection, and load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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