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F1S50N06-VB Product details
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F1S50N06-VB MOSFET Product Introduction
The F1S50N06-VB is a high-performance unipolar N-channel MOSFET in TO263 package. It is designed for high current and medium voltage applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) handling capability of ±20V. Its threshold voltage (Vth) is 1.7V, enabling it to operate stably at lower gate voltages. The F1S50N06-VB uses Trench technology to provide a low on-resistance of 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. With a drain current (ID) of up to 75A, it is suitable for high current switching and power management applications.
The F1S50N06-VB is a high-performance unipolar N-channel MOSFET in TO263 package. It is designed for high current and medium voltage applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) handling capability of ±20V. Its threshold voltage (Vth) is 1.7V, enabling it to operate stably at lower gate voltages. The F1S50N06-VB uses Trench technology to provide a low on-resistance of 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. With a drain current (ID) of up to 75A, it is suitable for high current switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
F1S50N06-VB MOSFET Detailed parameter description
- **Package type (Package):** TO263
- **Configuration (Configuration):** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID):** 75A
- **Technology type (Technology):** Trench
- **Package type (Package):** TO263
- **Configuration (Configuration):** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID):** 75A
- **Technology type (Technology):** Trench
Domain and module applications：
F1S50N06-VB MOSFET Applications and Module Examples
The high current handling capability and low on-resistance of the F1S50N06-VB MOSFET enable it to excel in a variety of areas. Here are a few typical application scenarios:
1. **Power Converters:** Due to its high current and low on-resistance, the F1S50N06-VB is suitable for high-efficiency DC-DC converters and switching power supplies. It can handle high current loads and provide stable switching performance, suitable for use in computer power supplies, server power supplies, and high-power power adapters.
2. **Motor Control:** In electric vehicles, power tools, and industrial motor drive systems, the high current capability and low on-resistance of the F1S50N06-VB enable it to effectively switch high-power motors, providing stable control and high efficiency.
3. **Load Switching:** In applications that require high current load switching, such as high power lighting systems and heater control, the F1S50N06-VB can reliably handle high power loads, ensuring efficient operation and stability of the system.
4. **Power Management Systems:** In battery management systems and power distribution modules, the high current handling capability and low on-resistance of the F1S50N06-VB make it suitable for efficient current switching and management, providing reliable power distribution and management solutions.
The high performance characteristics of the F1S50N06-VB MOSFET make it ideal in applications that require high current and high efficiency, providing a reliable solution for various power management and control systems.
The high current handling capability and low on-resistance of the F1S50N06-VB MOSFET enable it to excel in a variety of areas. Here are a few typical application scenarios:
1. **Power Converters:** Due to its high current and low on-resistance, the F1S50N06-VB is suitable for high-efficiency DC-DC converters and switching power supplies. It can handle high current loads and provide stable switching performance, suitable for use in computer power supplies, server power supplies, and high-power power adapters.
2. **Motor Control:** In electric vehicles, power tools, and industrial motor drive systems, the high current capability and low on-resistance of the F1S50N06-VB enable it to effectively switch high-power motors, providing stable control and high efficiency.
3. **Load Switching:** In applications that require high current load switching, such as high power lighting systems and heater control, the F1S50N06-VB can reliably handle high power loads, ensuring efficient operation and stability of the system.
4. **Power Management Systems:** In battery management systems and power distribution modules, the high current handling capability and low on-resistance of the F1S50N06-VB make it suitable for efficient current switching and management, providing reliable power distribution and management solutions.
The high performance characteristics of the F1S50N06-VB MOSFET make it ideal in applications that require high current and high efficiency, providing a reliable solution for various power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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