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F1S45N06-VB TO263 Product details
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F1S45N06-VB MOSFET Product Introduction
F1S45N06-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) is 60V and gate-source voltage (VGS) is ±20V, suitable for a variety of power and switching applications. The threshold voltage (Vth) of this MOSFET is 1.7V, ensuring stable turn-on performance at low voltage. The on-resistance (RDS(ON)) of F1S45N06-VB is 35mΩ at VGS of 4.5V and 32mΩ at VGS of 10V, and its maximum continuous drain current (ID) is 50A. F1S45N06-VB adopts Trench technology to provide excellent switching performance and high efficiency.
F1S45N06-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) is 60V and gate-source voltage (VGS) is ±20V, suitable for a variety of power and switching applications. The threshold voltage (Vth) of this MOSFET is 1.7V, ensuring stable turn-on performance at low voltage. The on-resistance (RDS(ON)) of F1S45N06-VB is 35mΩ at VGS of 4.5V and 32mΩ at VGS of 10V, and its maximum continuous drain current (ID) is 50A. F1S45N06-VB adopts Trench technology to provide excellent switching performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
F1S45N06-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and modules of F1S45N06-VB
With its high current handling capability and relatively low on-resistance, F1S45N06-VB MOSFET is suitable for a variety of high-performance applications and modules:
1. **Power management**: In power management systems, F1S45N06-VB can be used as a high-efficiency switching element for DC-DC converters and power regulators. Its low on-resistance can reduce power consumption and improve power efficiency, making it suitable for high-performance power supply designs.
2. **Motor drive**: F1S45N06-VB is ideal for motor drive applications, including electric vehicles and industrial motor control systems. Its high current handling capability and low on-resistance can stably drive the motor and provide efficient motor control.
3. **Battery management**: In battery management systems, F1S45N06-VB can be used as a switching element to control the battery charging and discharging process. Its high current carrying capability and low on-resistance can effectively protect the battery and optimize battery performance.
4. **Power Factor Correction (PFC)**: The F1S45N06-VB is suitable for power factor correction circuits to help improve the power factor of the power supply and reduce harmonic interference. Its high efficiency and low on-resistance characteristics make it perform well in PFC applications.
5. **High-power switching applications**: The F1S45N06-VB can be used in a variety of high-power switching circuits, such as switching power supplies, inverters, and power electronic devices. Its excellent current handling capability and low on-resistance make it perform well in these high-power applications.
In summary, the F1S45N06-VB MOSFET performs well in multiple fields and modules such as power management, motor drive, battery management, and power factor correction with its excellent current handling capability, low on-resistance, and high efficiency.
With its high current handling capability and relatively low on-resistance, F1S45N06-VB MOSFET is suitable for a variety of high-performance applications and modules:
1. **Power management**: In power management systems, F1S45N06-VB can be used as a high-efficiency switching element for DC-DC converters and power regulators. Its low on-resistance can reduce power consumption and improve power efficiency, making it suitable for high-performance power supply designs.
2. **Motor drive**: F1S45N06-VB is ideal for motor drive applications, including electric vehicles and industrial motor control systems. Its high current handling capability and low on-resistance can stably drive the motor and provide efficient motor control.
3. **Battery management**: In battery management systems, F1S45N06-VB can be used as a switching element to control the battery charging and discharging process. Its high current carrying capability and low on-resistance can effectively protect the battery and optimize battery performance.
4. **Power Factor Correction (PFC)**: The F1S45N06-VB is suitable for power factor correction circuits to help improve the power factor of the power supply and reduce harmonic interference. Its high efficiency and low on-resistance characteristics make it perform well in PFC applications.
5. **High-power switching applications**: The F1S45N06-VB can be used in a variety of high-power switching circuits, such as switching power supplies, inverters, and power electronic devices. Its excellent current handling capability and low on-resistance make it perform well in these high-power applications.
In summary, the F1S45N06-VB MOSFET performs well in multiple fields and modules such as power management, motor drive, battery management, and power factor correction with its excellent current handling capability, low on-resistance, and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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