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F1S40N10-VB Product details
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Product Introduction:
F1S40N10-VB is a single N-channel MOSFET in TO262 package, designed for medium-to-high voltage and medium-to-high current applications. Its rated drain-source voltage is 100V and the gate-source voltage range is ±20V. F1S40N10-VB uses advanced trench technology to provide lower on-resistance and higher drain current carrying capacity. The low RDS(ON) characteristics and high current handling capability of this MOSFET make it suitable for a variety of high-efficiency power switching and power management applications.
F1S40N10-VB is a single N-channel MOSFET in TO262 package, designed for medium-to-high voltage and medium-to-high current applications. Its rated drain-source voltage is 100V and the gate-source voltage range is ±20V. F1S40N10-VB uses advanced trench technology to provide lower on-resistance and higher drain current carrying capacity. The low RDS(ON) characteristics and high current handling capability of this MOSFET make it suitable for a variety of high-efficiency power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description:
- **Package type**: TO262
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO262
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Applications and modules:
1. **High-efficiency power switch**: The F1S40N10-VB is ideal for high-efficiency power switch modules, such as DC-DC converters and high-power switching power supplies. Its low on-resistance characteristic helps reduce power loss and improve the system's conversion efficiency, making it suitable for power supply designs with strict efficiency requirements.
2. **Motor drive applications**: In motor drive circuits, such as DC motors and stepper motor drivers, the high current handling capability and low on-resistance of the F1S40N10-VB can effectively control the start-up and operation of the motor, providing stable and efficient current management, and is suitable for various motor control systems.
3. **Power management and load switching**: This MOSFET performs well in power management and load switching applications. Its lower RDS(ON) enables it to reduce energy loss when handling medium and high power loads, improving the overall system efficiency, and is suitable for load switching and power distribution modules.
4. **Battery Management System**: F1S40N10-VB is suitable for battery management systems (BMS), especially in electric vehicles and energy storage systems. Its high current carrying capacity and low conduction loss can effectively manage the battery charging and discharging process, improve the efficiency and safety of the battery system, and support long-term stable operation.
1. **High-efficiency power switch**: The F1S40N10-VB is ideal for high-efficiency power switch modules, such as DC-DC converters and high-power switching power supplies. Its low on-resistance characteristic helps reduce power loss and improve the system's conversion efficiency, making it suitable for power supply designs with strict efficiency requirements.
2. **Motor drive applications**: In motor drive circuits, such as DC motors and stepper motor drivers, the high current handling capability and low on-resistance of the F1S40N10-VB can effectively control the start-up and operation of the motor, providing stable and efficient current management, and is suitable for various motor control systems.
3. **Power management and load switching**: This MOSFET performs well in power management and load switching applications. Its lower RDS(ON) enables it to reduce energy loss when handling medium and high power loads, improving the overall system efficiency, and is suitable for load switching and power distribution modules.
4. **Battery Management System**: F1S40N10-VB is suitable for battery management systems (BMS), especially in electric vehicles and energy storage systems. Its high current carrying capacity and low conduction loss can effectively manage the battery charging and discharging process, improve the efficiency and safety of the battery system, and support long-term stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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