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F1S30P06-VB Product details
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Product Introduction
**F1S30P06-VB** is a high-performance P-Channel MOSFET in a TO263 package using Trench technology. It is designed to handle medium voltage and current applications, with a drain-source voltage (VDS) of up to -60V and a maximum drain current (ID) of -35A. The gate-source voltage (VGS) of this MOSFET is ±20V and the threshold voltage (Vth) is -1.7V, ensuring that it can be turned on quickly at the appropriate gate voltage. Its on-resistance (RDS(ON)) is 60mΩ at VGS=4.5V and 48mΩ at VGS=10V, providing the system with low-power, high-efficiency switching capabilities.
**F1S30P06-VB** is a high-performance P-Channel MOSFET in a TO263 package using Trench technology. It is designed to handle medium voltage and current applications, with a drain-source voltage (VDS) of up to -60V and a maximum drain current (ID) of -35A. The gate-source voltage (VGS) of this MOSFET is ±20V and the threshold voltage (Vth) is -1.7V, ensuring that it can be turned on quickly at the appropriate gate voltage. Its on-resistance (RDS(ON)) is 60mΩ at VGS=4.5V and 48mΩ at VGS=10V, providing the system with low-power, high-efficiency switching capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: F1S30P06-VB
- **Package**: TO263
- **Configuration**: Unipolar P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 48mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -35A
- **Technology**: Trench
- **Model**: F1S30P06-VB
- **Package**: TO263
- **Configuration**: Unipolar P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 48mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -35A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The characteristics of the **F1S30P06-VB** make it suitable for many fields, especially those involving medium voltage and current control. Here are some specific application examples:
1. **Power Switch**: In power management systems, the F1S30P06-VB can efficiently control power switches as a P-Channel MOSFET. Its low on-resistance and high current handling capability make it suitable for use in DC-DC converters and power switch modules to provide stable and reliable power switching.
2. **Motor Drive**: In motor drive applications, such as power tools or automation equipment, the F1S30P06-VB can control the forward and reverse operation of the motor. Its high current capability and low on-resistance ensure that the motor can obtain a stable current supply during operation, thereby improving the performance and efficiency of the equipment.
3. **Load Switch**: In load switch applications, such as lighting control and other load switch devices, this MOSFET can effectively control the current flowing through the load, ensuring the accuracy and efficiency of the switching operation, especially in situations requiring high current and low power consumption.
4. **Efficient Power Management**: In efficient power management systems, such as UPS (Uninterruptible Power Supply) and power protection circuits, the low on-resistance and high current handling capability provided by the F1S30P06-VB help improve the overall efficiency of the system, reduce power consumption and heat, and ensure the stability and reliability of the power system.
5. **Battery Management System**: In battery management systems, this MOSFET can be used for battery protection and switch control, such as switch control during charging and discharging to ensure the safety of the battery and extend its service life.
The characteristics of the **F1S30P06-VB** make it suitable for many fields, especially those involving medium voltage and current control. Here are some specific application examples:
1. **Power Switch**: In power management systems, the F1S30P06-VB can efficiently control power switches as a P-Channel MOSFET. Its low on-resistance and high current handling capability make it suitable for use in DC-DC converters and power switch modules to provide stable and reliable power switching.
2. **Motor Drive**: In motor drive applications, such as power tools or automation equipment, the F1S30P06-VB can control the forward and reverse operation of the motor. Its high current capability and low on-resistance ensure that the motor can obtain a stable current supply during operation, thereby improving the performance and efficiency of the equipment.
3. **Load Switch**: In load switch applications, such as lighting control and other load switch devices, this MOSFET can effectively control the current flowing through the load, ensuring the accuracy and efficiency of the switching operation, especially in situations requiring high current and low power consumption.
4. **Efficient Power Management**: In efficient power management systems, such as UPS (Uninterruptible Power Supply) and power protection circuits, the low on-resistance and high current handling capability provided by the F1S30P06-VB help improve the overall efficiency of the system, reduce power consumption and heat, and ensure the stability and reliability of the power system.
5. **Battery Management System**: In battery management systems, this MOSFET can be used for battery protection and switch control, such as switch control during charging and discharging to ensure the safety of the battery and extend its service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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