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F1S25N06-VB Product details
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F1S25N06-VB MOSFET Product Introduction
**F1S25N06-VB** is a high-performance unipolar N-type MOSFET in a TO263 package designed for medium voltage and high current applications. Its drain-source voltage (VDS) is 60V, suitable for higher voltage switches and power management systems. The gate-source voltage (VGS) range of the MOSFET is ±20V, which can remain stable under a wide range of operating conditions. The threshold voltage (Vth) is 1.7V, ensuring reliable turn-on at lower gate voltages. The on-resistance (RDS(ON)) is 32mΩ (VGS = 10V), providing relatively low power losses in high current applications. The maximum drain current (ID) is 50A, capable of handling higher current loads. Using Trench technology, the F1S25N06-VB has excellent switching performance and current carrying capacity, making it very suitable for medium and high power applications.
**F1S25N06-VB** is a high-performance unipolar N-type MOSFET in a TO263 package designed for medium voltage and high current applications. Its drain-source voltage (VDS) is 60V, suitable for higher voltage switches and power management systems. The gate-source voltage (VGS) range of the MOSFET is ±20V, which can remain stable under a wide range of operating conditions. The threshold voltage (Vth) is 1.7V, ensuring reliable turn-on at lower gate voltages. The on-resistance (RDS(ON)) is 32mΩ (VGS = 10V), providing relatively low power losses in high current applications. The maximum drain current (ID) is 50A, capable of handling higher current loads. Using Trench technology, the F1S25N06-VB has excellent switching performance and current carrying capacity, making it very suitable for medium and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 32mΩ @ VGS = 10V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 32mΩ @ VGS = 10V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
**1. Power Management Systems**: The low on-resistance and high current handling capability of the F1S25N06-VB make it ideal for use in power management systems such as DC-DC converters and power distribution modules. This MOSFET can significantly reduce power loss, improve power conversion efficiency, and ensure stable system operation under high power conditions.
**2. Motor Drivers**: In high-current motor drive applications, such as DC motor controllers or stepper motor drivers, the F1S25N06-VB is able to effectively handle high current loads in motor drives. Its low RDS(ON) and high current carrying capacity help improve the efficiency and reliability of motor drive systems and reduce heat generation.
**3. Battery Protection and Management**: The F1S25N06-VB is suitable for battery management systems, including battery protection and charge and discharge control circuits. Its low on-resistance and high current capability can maintain high efficiency during battery charging and discharging, protect the battery from overcurrent and overheating, and extend battery life.
**4. High-power switching applications**: This MOSFET is also suitable for high-power switching applications, such as high-power load switches and inverters. The high current handling capability and low RDS(ON) characteristics of the F1S25N06-VB enable it to efficiently control high-power loads, ensuring the stability and reliability of the system in high-power operations.
These application examples show that the F1S25N06-VB has a wide range of applicability in power management, motor drive, battery protection, and high-power switching, and its excellent performance makes it a key component in these fields.
**1. Power Management Systems**: The low on-resistance and high current handling capability of the F1S25N06-VB make it ideal for use in power management systems such as DC-DC converters and power distribution modules. This MOSFET can significantly reduce power loss, improve power conversion efficiency, and ensure stable system operation under high power conditions.
**2. Motor Drivers**: In high-current motor drive applications, such as DC motor controllers or stepper motor drivers, the F1S25N06-VB is able to effectively handle high current loads in motor drives. Its low RDS(ON) and high current carrying capacity help improve the efficiency and reliability of motor drive systems and reduce heat generation.
**3. Battery Protection and Management**: The F1S25N06-VB is suitable for battery management systems, including battery protection and charge and discharge control circuits. Its low on-resistance and high current capability can maintain high efficiency during battery charging and discharging, protect the battery from overcurrent and overheating, and extend battery life.
**4. High-power switching applications**: This MOSFET is also suitable for high-power switching applications, such as high-power load switches and inverters. The high current handling capability and low RDS(ON) characteristics of the F1S25N06-VB enable it to efficiently control high-power loads, ensuring the stability and reliability of the system in high-power operations.
These application examples show that the F1S25N06-VB has a wide range of applicability in power management, motor drive, battery protection, and high-power switching, and its excellent performance makes it a key component in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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