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F16N06-VB TO252 Product details
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F16N06-VB MOSFET Product Introduction
F16N06-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, this MOSFET can provide stable performance under different gate-source voltages. Its threshold voltage (Vth) is 1.7V, which is suitable for low-voltage control applications. The on-resistance (RDS(ON)) of F16N06-VB is 30mΩ at VGS of 4.5V and 25mΩ at VGS of 10V, and the maximum continuous drain current (ID) is 45A. It uses Trench technology to provide excellent switching performance and reliability.
F16N06-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, this MOSFET can provide stable performance under different gate-source voltages. Its threshold voltage (Vth) is 1.7V, which is suitable for low-voltage control applications. The on-resistance (RDS(ON)) of F16N06-VB is 30mΩ at VGS of 4.5V and 25mΩ at VGS of 10V, and the maximum continuous drain current (ID) is 45A. It uses Trench technology to provide excellent switching performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
F16N06-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and modules of F16N06-VB
F16N06-VB MOSFET is suitable for several high-performance applications and modules due to its high current handling capability and relatively low on-resistance:
1. **Power management**: In power management and conversion circuits, F16N06-VB can be used as an efficient switching element, especially in DC-DC converters and power regulators. Its low on-resistance helps reduce power consumption and improve power efficiency.
2. **Motor drive**: F16N06-VB is well suited for use in motor drive systems, including electric vehicle drives and industrial motor control modules. Its high current carrying capability and low on-resistance can stably drive the motor and ensure efficient operation.
3. **Battery protection**: In battery management systems, F16N06-VB can be used as a battery protection switch to control the charging and discharging process. Its high current handling capability and low on-resistance help protect the battery pack and extend its service life.
4. **Power Factor Correction (PFC)**: F16N06-VB can be used in power factor correction circuits to help improve the power factor of the power supply and reduce harmonic interference. Its high efficiency characteristics make it excel in PFC applications.
5. **High Power Switching Applications**: In high power switching circuits, such as switching power supplies, inverters, and power electronic equipment, F16N06-VB as a switching element can provide reliable performance and high efficiency to adapt to operating requirements under different load conditions.
In summary, F16N06-VB MOSFET is widely used in high-efficiency applications and modules such as power management, motor drive, battery protection, and power factor correction due to its high current carrying capacity, low on-resistance, and reliability.
F16N06-VB MOSFET is suitable for several high-performance applications and modules due to its high current handling capability and relatively low on-resistance:
1. **Power management**: In power management and conversion circuits, F16N06-VB can be used as an efficient switching element, especially in DC-DC converters and power regulators. Its low on-resistance helps reduce power consumption and improve power efficiency.
2. **Motor drive**: F16N06-VB is well suited for use in motor drive systems, including electric vehicle drives and industrial motor control modules. Its high current carrying capability and low on-resistance can stably drive the motor and ensure efficient operation.
3. **Battery protection**: In battery management systems, F16N06-VB can be used as a battery protection switch to control the charging and discharging process. Its high current handling capability and low on-resistance help protect the battery pack and extend its service life.
4. **Power Factor Correction (PFC)**: F16N06-VB can be used in power factor correction circuits to help improve the power factor of the power supply and reduce harmonic interference. Its high efficiency characteristics make it excel in PFC applications.
5. **High Power Switching Applications**: In high power switching circuits, such as switching power supplies, inverters, and power electronic equipment, F16N06-VB as a switching element can provide reliable performance and high efficiency to adapt to operating requirements under different load conditions.
In summary, F16N06-VB MOSFET is widely used in high-efficiency applications and modules such as power management, motor drive, battery protection, and power factor correction due to its high current carrying capacity, low on-resistance, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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