F15NM60N-VB Product details
Product introduction:
**F15NM60N-VB** is a high-voltage, high-power N-Channel MOSFET in a TO220F package, suitable for applications that need to handle high voltage and medium current. The MOSFET has a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of ±30V, and supports a maximum drain current of 20A. Its threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 320mΩ at VGS=10V, which is suitable for high-voltage switching and current control applications. This MOSFET uses Plannar technology to provide stable electrical performance and reliable operating characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: F15NM60N-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications:
The high voltage carrying capacity and relatively high on-resistance of **F15NM60N-VB** make it particularly suitable for the following fields and modules:
1. **High voltage switching circuit**: Due to its high drain-source voltage of 650V, F15NM60N-VB is particularly suitable for high voltage switching circuits such as AC-DC converters and high voltage power switches. This high voltage MOSFET can handle switching tasks in high voltage environments and has stable conductive performance.
2. **Power management system**: In power management systems, especially applications requiring high voltage and higher power, such as UPS (uninterruptible power supply) and high power DC power supplies, this MOSFET can provide reliable switching control and effectively manage the output and protection of the power supply.
3. **Inverter**: In solar inverters and other power inverters, the high voltage carrying capacity and robust performance of the F15NM60N-VB make it suitable for switching control at high voltage input and output ends, improving the efficiency and reliability of the inverter.
4. **Motor Drive**: In motor drive systems, such as the drive circuits of high-voltage DC motors or stepper motors, this MOSFET is able to handle large voltage and medium current requirements, providing stable switching control to ensure normal operation and efficient control of the motor.
5. **Power Electronics**: In various power electronic devices, such as high-voltage converters and high-voltage protection circuits, the high voltage tolerance and good switching characteristics of the F15NM60N-VB make it an ideal choice, helping to improve the overall performance and safety of the equipment.
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