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F1405ZS-7P-VB Product details
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F1405ZS-7P-VB MOSFET Product Introduction
The F1405ZS-7P-VB is a high-performance dual N-channel MOSFET in TO263-7L package. It is designed for high current and high voltage applications and has a dual-channel configuration, suitable for systems that require high power handling. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) handling capability of ±20V. Its threshold voltage (Vth) is 3V, ensuring stable operation at relatively low gate voltages. The F1405ZS-7P-VB uses Trench technology to provide extremely low on-resistance, 2mΩ at VGS=10V, and a drain current (ID) of up to 150A, suitable for high power switching and power management applications.
The F1405ZS-7P-VB is a high-performance dual N-channel MOSFET in TO263-7L package. It is designed for high current and high voltage applications and has a dual-channel configuration, suitable for systems that require high power handling. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) handling capability of ±20V. Its threshold voltage (Vth) is 3V, ensuring stable operation at relatively low gate voltages. The F1405ZS-7P-VB uses Trench technology to provide extremely low on-resistance, 2mΩ at VGS=10V, and a drain current (ID) of up to 150A, suitable for high power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
F1405ZS-7P-VB MOSFET Detailed parameter description
- **Package type (Package):** TO263-7L
- **Configuration (Configuration):** Dual-N+N-Channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 2mΩ @ VGS=10V
- **Drain current (ID):** 150A
- **Technology type (Technology):** Trench
- **Package type (Package):** TO263-7L
- **Configuration (Configuration):** Dual-N+N-Channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 2mΩ @ VGS=10V
- **Drain current (ID):** 150A
- **Technology type (Technology):** Trench
Domain and module applications：
F1405ZS-7P-VB MOSFET Applications and Module Examples
The high current handling capability and extremely low on-resistance of the F1405ZS-7P-VB MOSFET make it excellent in many applications. Here are some typical application scenarios:
1. **High-Efficiency Power Converters:** In DC-DC converters and high-power switching power supplies, the F1405ZS-7P-VB can efficiently handle high currents and high voltages. It is suitable for use in data center power supplies, server power supplies, and high-power power adapters to improve system efficiency and reduce energy consumption.
2. **Motor Control:** The high current and low on-resistance of this MOSFET make it ideal for electric vehicles, power tools, and industrial motor control applications, providing stable current control and improving the overall performance of the system.
3. **High-Power Load Switching:** In high-power load switching applications, such as high-power lighting systems and heater controls, the high current capability and low power consumption of the F1405ZS-7P-VB can effectively handle high-power loads, ensuring system reliability and efficiency.
4. **Power Management Systems:** In battery management and power distribution modules, the dual N-channel design of the F1405ZS-7P-VB allows for handling multiple high-current channels in a compact space, making it suitable for energy storage systems and efficient power management solutions.
The excellent performance and flexible configuration of the F1405ZS-7P-VB MOSFET make it widely applicable in modern high-power applications, providing efficient power management and load switching solutions.
The high current handling capability and extremely low on-resistance of the F1405ZS-7P-VB MOSFET make it excellent in many applications. Here are some typical application scenarios:
1. **High-Efficiency Power Converters:** In DC-DC converters and high-power switching power supplies, the F1405ZS-7P-VB can efficiently handle high currents and high voltages. It is suitable for use in data center power supplies, server power supplies, and high-power power adapters to improve system efficiency and reduce energy consumption.
2. **Motor Control:** The high current and low on-resistance of this MOSFET make it ideal for electric vehicles, power tools, and industrial motor control applications, providing stable current control and improving the overall performance of the system.
3. **High-Power Load Switching:** In high-power load switching applications, such as high-power lighting systems and heater controls, the high current capability and low power consumption of the F1405ZS-7P-VB can effectively handle high-power loads, ensuring system reliability and efficiency.
4. **Power Management Systems:** In battery management and power distribution modules, the dual N-channel design of the F1405ZS-7P-VB allows for handling multiple high-current channels in a compact space, making it suitable for energy storage systems and efficient power management solutions.
The excellent performance and flexible configuration of the F1405ZS-7P-VB MOSFET make it widely applicable in modern high-power applications, providing efficient power management and load switching solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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