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F1404S-VB Product details
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F1404S-VB MOSFET Product Introduction
The F1404S-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and medium voltage applications. It has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. The on-resistance (RDS(ON)) of this MOSFET is 2.5mΩ at a VGS of 4.5V and 2mΩ at a VGS of 10V. Its maximum continuous drain current (ID) is 150A, indicating its excellent performance in high current applications. The F1404S-VB uses Trench technology to ensure high performance and reliability in high current applications.
The F1404S-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and medium voltage applications. It has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. The on-resistance (RDS(ON)) of this MOSFET is 2.5mΩ at a VGS of 4.5V and 2mΩ at a VGS of 10V. Its maximum continuous drain current (ID) is 150A, indicating its excellent performance in high current applications. The F1404S-VB uses Trench technology to ensure high performance and reliability in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
F1404S-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ @ VGS=4.5V; 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ @ VGS=4.5V; 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and modules of F1404S-VB
With its high current carrying capacity and extremely low on-resistance, F1404S-VB MOSFET is suitable for a variety of high-performance applications and modules:
1. **High-power power management**: In power management and conversion modules, F1404S-VB can be used as an efficient switching element, especially in high-power DC-DC converters. Its extremely low on-resistance can significantly reduce power consumption and improve power efficiency.
2. **Motor driver**: This MOSFET is suitable for use in motor drive circuits, especially high-current and high-efficiency motor control systems. It can stably drive high-current motors, provide reliable control and high-efficiency operation.
3. **Battery management system**: In battery management and protection circuits, F1404S-VB can be used as a high-current switch to help effectively manage the battery during charging and discharging. Its low on-resistance and high current capability make it excellent in protecting battery packs.
4. **Power Factor Correction (PFC)**: In the PFC circuit, F1404S-VB as a switching element can help improve the power factor of the power supply and reduce harmonic interference in the system. Its high current handling capability and low on-resistance are very suitable for high-efficiency PFC applications.
In summary, F1404S-VB MOSFET is widely used in many fields and modules such as high current power management, motor drive, battery management and power factor correction due to its excellent current handling capability, low on-resistance and high efficiency.
With its high current carrying capacity and extremely low on-resistance, F1404S-VB MOSFET is suitable for a variety of high-performance applications and modules:
1. **High-power power management**: In power management and conversion modules, F1404S-VB can be used as an efficient switching element, especially in high-power DC-DC converters. Its extremely low on-resistance can significantly reduce power consumption and improve power efficiency.
2. **Motor driver**: This MOSFET is suitable for use in motor drive circuits, especially high-current and high-efficiency motor control systems. It can stably drive high-current motors, provide reliable control and high-efficiency operation.
3. **Battery management system**: In battery management and protection circuits, F1404S-VB can be used as a high-current switch to help effectively manage the battery during charging and discharging. Its low on-resistance and high current capability make it excellent in protecting battery packs.
4. **Power Factor Correction (PFC)**: In the PFC circuit, F1404S-VB as a switching element can help improve the power factor of the power supply and reduce harmonic interference in the system. Its high current handling capability and low on-resistance are very suitable for high-efficiency PFC applications.
In summary, F1404S-VB MOSFET is widely used in many fields and modules such as high current power management, motor drive, battery management and power factor correction due to its excellent current handling capability, low on-resistance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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