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F1404L-VB TO262 Product details
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Product Introduction
**F1404L-VB** is a high-performance N-Channel MOSFET in TO262 package, designed for applications that need to handle high current and high efficiency. This device uses Trench technology to provide extremely low on-resistance (RDS(ON)) and excellent switching characteristics. Its drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) is ±20V, and the maximum drain current (ID) is up to 150A, which is suitable for high-power applications. Its threshold voltage (Vth) is 3.3V, and the on-resistance (RDS(ON)) is only 1.7mΩ at VGS=10V, ensuring lower power consumption and efficient current conduction.
**F1404L-VB** is a high-performance N-Channel MOSFET in TO262 package, designed for applications that need to handle high current and high efficiency. This device uses Trench technology to provide extremely low on-resistance (RDS(ON)) and excellent switching characteristics. Its drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) is ±20V, and the maximum drain current (ID) is up to 150A, which is suitable for high-power applications. Its threshold voltage (Vth) is 3.3V, and the on-resistance (RDS(ON)) is only 1.7mΩ at VGS=10V, ensuring lower power consumption and efficient current conduction.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | 1.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: F1404L-VB
- **Package**: TO262
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 40V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3.3V
- **On-Resistance (RDS(ON))**:
- 1.7mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 150A
- **Technology**: Trench
- **Model**: F1404L-VB
- **Package**: TO262
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 40V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3.3V
- **On-Resistance (RDS(ON))**:
- 1.7mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**F1404L-VB**'s high efficiency and high current handling capability make it suitable for multiple applications that require high power and high efficiency. Here are a few specific application examples:
1. **Power tools and industrial equipment**: In power tools and industrial equipment, this MOSFET can be used as a power switch or motor driver. Its low on-resistance and high current carrying capacity ensure efficient operation and low heat loss of the equipment during heavy-load operation.
2. **Automotive electronic systems**: In automotive electronic systems, F1404L-VB can be used in applications such as power control modules and DC motor controllers. With its high current carrying capacity and low on-resistance, it can significantly improve the energy efficiency and reliability of the system.
3. **High-efficiency power management**: In power management systems, such as DC-DC converters and power conditioning modules, this MOSFET can efficiently handle large currents and high power, ensuring the stability and high efficiency of the power system.
4. **UPS and backup power systems**: In uninterruptible power supplies (UPS) and backup power systems, the F1404L-VB provides stable high power handling capabilities, ensuring that when the main power fails, it can quickly switch to the backup power supply to maintain the normal operation of the equipment.
5. **Data center power distribution**: In the power distribution unit (PDU) of the data center, this MOSFET can be used as a high-efficiency power switching device. Its low on-resistance and high current handling capability help reduce the energy consumption of the data center and improve the overall operating efficiency.
**F1404L-VB**'s high efficiency and high current handling capability make it suitable for multiple applications that require high power and high efficiency. Here are a few specific application examples:
1. **Power tools and industrial equipment**: In power tools and industrial equipment, this MOSFET can be used as a power switch or motor driver. Its low on-resistance and high current carrying capacity ensure efficient operation and low heat loss of the equipment during heavy-load operation.
2. **Automotive electronic systems**: In automotive electronic systems, F1404L-VB can be used in applications such as power control modules and DC motor controllers. With its high current carrying capacity and low on-resistance, it can significantly improve the energy efficiency and reliability of the system.
3. **High-efficiency power management**: In power management systems, such as DC-DC converters and power conditioning modules, this MOSFET can efficiently handle large currents and high power, ensuring the stability and high efficiency of the power system.
4. **UPS and backup power systems**: In uninterruptible power supplies (UPS) and backup power systems, the F1404L-VB provides stable high power handling capabilities, ensuring that when the main power fails, it can quickly switch to the backup power supply to maintain the normal operation of the equipment.
5. **Data center power distribution**: In the power distribution unit (PDU) of the data center, this MOSFET can be used as a high-efficiency power switching device. Its low on-resistance and high current handling capability help reduce the energy consumption of the data center and improve the overall operating efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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