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F13NM50N-VB Product details

Product introduction:

Product Introduction

**F13NM50N-VB** is a high-voltage N-Channel MOSFET in a TO220F package. This MOSFET has a single N-Channel configuration and supports a drain-source voltage (VDS) of up to 550V and a gate-source voltage (VGS) range of ±30V. Its threshold voltage (Vth) is 3V, which is suitable for operation at relatively high gate voltages. The F13NM50N-VB uses planar structure (Planar) technology, with an on-resistance (RDS(ON)) of 260mΩ at a VGS of 10V, and supports a maximum drain current (ID) of up to 18A. The device is designed to balance high voltage carrying capability and efficient conduction performance, and is suitable for a variety of high-voltage application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 550V 3V 18A 260mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 550V 3V 18A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 550V 3V 18A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Model**: F13NM50N-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar

Domain and module applications:

Applications and Module Examples

The high voltage characteristics of the **F13NM50N-VB** make it very suitable for use in multiple applications and modules:

1. **Switching Mode Power Supply (SMPS)**: The F13NM50N-VB is well suited for use in switching mode power supplies (SMPS), especially with high voltage inputs. Its high drain-source voltage capability enables it to efficiently handle the conversion from high voltage input to low voltage output, while its reasonable on-resistance ensures low switching losses.

2. **Power Inverter**: In inverter applications, especially those high voltage inverters that need to convert DC to AC, the high voltage withstand characteristics and higher current capability of the F13NM50N-VB make it an ideal choice. Its planar structure provides reliable performance and stability, ensuring the safety and efficiency of the equipment under high voltage operation.

3. **Industrial Motor Drive**: The high voltage and high current characteristics of this MOSFET make it suitable for industrial motor drive applications, especially in scenarios where high-power motors need to be controlled and driven. It can effectively handle the high voltage and high current required for the start-up and normal operation of the motor.

4. **Lighting System**: In high-voltage LED lighting drive circuits, the F13NM50N-VB can be used to drive high-voltage LED arrays. Its high voltage capability ensures stable operation under various power conditions, while its low switching loss helps improve the overall energy efficiency of the lighting system.

5. **Power Quality Control Equipment**: In power quality control equipment, such as voltage regulators or power filters, the F13NM50N-VB can help manage and regulate fluctuations in high-voltage power supplies, provide stable power output, and protect downstream equipment.

The high voltage and high current capabilities of the F13NM50N-VB, as well as its robust planar structure, make it an ideal choice for a variety of industrial and power applications that need to handle high power and high voltage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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