F13NM50N-VB Product details
Product introduction:
**F13NM50N-VB** is a high-voltage N-Channel MOSFET in a TO220F package. This MOSFET has a single N-Channel configuration and supports a drain-source voltage (VDS) of up to 550V and a gate-source voltage (VGS) range of ±30V. Its threshold voltage (Vth) is 3V, which is suitable for operation at relatively high gate voltages. The F13NM50N-VB uses planar structure (Planar) technology, with an on-resistance (RDS(ON)) of 260mΩ at a VGS of 10V, and supports a maximum drain current (ID) of up to 18A. The device is designed to balance high voltage carrying capability and efficient conduction performance, and is suitable for a variety of high-voltage application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: F13NM50N-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar
Domain and module applications:
The high voltage characteristics of the **F13NM50N-VB** make it very suitable for use in multiple applications and modules:
1. **Switching Mode Power Supply (SMPS)**: The F13NM50N-VB is well suited for use in switching mode power supplies (SMPS), especially with high voltage inputs. Its high drain-source voltage capability enables it to efficiently handle the conversion from high voltage input to low voltage output, while its reasonable on-resistance ensures low switching losses.
2. **Power Inverter**: In inverter applications, especially those high voltage inverters that need to convert DC to AC, the high voltage withstand characteristics and higher current capability of the F13NM50N-VB make it an ideal choice. Its planar structure provides reliable performance and stability, ensuring the safety and efficiency of the equipment under high voltage operation.
3. **Industrial Motor Drive**: The high voltage and high current characteristics of this MOSFET make it suitable for industrial motor drive applications, especially in scenarios where high-power motors need to be controlled and driven. It can effectively handle the high voltage and high current required for the start-up and normal operation of the motor.
4. **Lighting System**: In high-voltage LED lighting drive circuits, the F13NM50N-VB can be used to drive high-voltage LED arrays. Its high voltage capability ensures stable operation under various power conditions, while its low switching loss helps improve the overall energy efficiency of the lighting system.
5. **Power Quality Control Equipment**: In power quality control equipment, such as voltage regulators or power filters, the F13NM50N-VB can help manage and regulate fluctuations in high-voltage power supplies, provide stable power output, and protect downstream equipment.
The high voltage and high current capabilities of the F13NM50N-VB, as well as its robust planar structure, make it an ideal choice for a variety of industrial and power applications that need to handle high power and high voltage.
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