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F13N50-VB Product details
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F13N50-VB MOSFET Product Introduction
**F13N50-VB** is a high voltage unipolar N-type MOSFET in TO220F package, designed for applications with high voltage and medium current handling requirements. The device has a drain-source voltage (VDS) of up to 550V, which is very suitable for applications that need to withstand high voltage. The gate-source voltage (VGS) range of the MOSFET is ±30V, with good voltage resistance and adaptability to harsh working environments. Its threshold voltage (Vth) is 3V, ensuring stable turn-on at higher gate voltages. The on-resistance (RDS(ON)) is 260mΩ (VGS = 10V), maintaining good switching performance in high voltage applications. The maximum drain current (ID) is 18A, capable of handling medium load currents. The F13N50-VB uses Plannar technology, providing excellent voltage resistance and reliable current carrying capacity, and is particularly suitable for high voltage switching and power management applications.
**F13N50-VB** is a high voltage unipolar N-type MOSFET in TO220F package, designed for applications with high voltage and medium current handling requirements. The device has a drain-source voltage (VDS) of up to 550V, which is very suitable for applications that need to withstand high voltage. The gate-source voltage (VGS) range of the MOSFET is ±30V, with good voltage resistance and adaptability to harsh working environments. Its threshold voltage (Vth) is 3V, ensuring stable turn-on at higher gate voltages. The on-resistance (RDS(ON)) is 260mΩ (VGS = 10V), maintaining good switching performance in high voltage applications. The maximum drain current (ID) is 18A, capable of handling medium load currents. The F13N50-VB uses Plannar technology, providing excellent voltage resistance and reliable current carrying capacity, and is particularly suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
**1. Switching power supply (SMPS)**: The F13N50-VB is ideal for use in switching power supplies, especially for applications with high voltage input, such as grid-powered power adapters and industrial power supplies. This high-voltage MOSFET has good conduction performance under high-voltage operation, ensuring high efficiency and reliability of power conversion.
**2. Motor controller**: In industrial motor control systems, such as high-voltage DC motor controllers, the F13N50-VB can provide the necessary high-voltage resistance and stability. Its high-voltage characteristics ensure that it can handle large voltage fluctuations and transient shocks in motor control applications, improving the stability and life of the system.
**3. Inverter**: This MOSFET is suitable for high-voltage inverter circuits in solar inverters, UPS systems, and electric vehicle chargers. Its high voltage tolerance allows it to perform well in these inverter applications that require high efficiency and reliability, reducing energy losses and improving the overall efficiency of the system.
**4. Lighting Driver**: F13N50-VB can also be used in high-voltage LED lighting drivers. Its high-voltage operation capability and low conduction loss characteristics enable it to provide efficient current control and stable brightness output when driving high-power LED lamps.
These application examples show that F13N50-VB MOSFET has a wide range of applicability in various high-voltage applications, especially in switching power supplies, motor control, inverters and lighting drivers. Its high voltage and medium current handling capabilities make it an ideal choice for these applications.
**1. Switching power supply (SMPS)**: The F13N50-VB is ideal for use in switching power supplies, especially for applications with high voltage input, such as grid-powered power adapters and industrial power supplies. This high-voltage MOSFET has good conduction performance under high-voltage operation, ensuring high efficiency and reliability of power conversion.
**2. Motor controller**: In industrial motor control systems, such as high-voltage DC motor controllers, the F13N50-VB can provide the necessary high-voltage resistance and stability. Its high-voltage characteristics ensure that it can handle large voltage fluctuations and transient shocks in motor control applications, improving the stability and life of the system.
**3. Inverter**: This MOSFET is suitable for high-voltage inverter circuits in solar inverters, UPS systems, and electric vehicle chargers. Its high voltage tolerance allows it to perform well in these inverter applications that require high efficiency and reliability, reducing energy losses and improving the overall efficiency of the system.
**4. Lighting Driver**: F13N50-VB can also be used in high-voltage LED lighting drivers. Its high-voltage operation capability and low conduction loss characteristics enable it to provide efficient current control and stable brightness output when driving high-power LED lamps.
These application examples show that F13N50-VB MOSFET has a wide range of applicability in various high-voltage applications, especially in switching power supplies, motor control, inverters and lighting drivers. Its high voltage and medium current handling capabilities make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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