F1324S-VB Product details
Product introduction:
**F1324S-VB** is a single N-channel MOSFET in a TO263 package, designed for applications that need to handle high currents and low on-resistance. The device has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, ensuring that it can operate stably under harsh operating conditions. Its threshold voltage (Vth) is 1.7V, the on-resistance (RDS(ON)) is 1.6mΩ at VGS = 4.5V, and 1.4mΩ at VGS = 10V, and the maximum drain current (ID) reaches 260A. This MOSFET uses Trench technology to provide excellent conduction performance and is suitable for applications requiring high efficiency and low losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: F1324S-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 260A
- **Technology**: Trench
Domain and module applications:
1. Electric Vehicles (EVs):
The F1324S-VB is ideally suited for use in the powertrain and battery management systems of electric vehicles due to its ultra-low on-resistance and high current handling capability. In these applications, the device is able to effectively control and distribute current, thereby improving overall system efficiency and extending battery life.
2. High-Performance Computing (HPC):
In high-performance computing systems in servers and data centers, this MOSFET is able to handle high current demands, providing stable power to processors, memory, etc., ensuring stable operation of the system under high load conditions and reducing energy consumption.
3. Power Management Modules:
The F1324S-VB can be used as a high-efficiency switch in power management modules, suitable for DC-DC converters, regulators, etc. that require high-efficiency conversion. Its low on-resistance results in extremely low switching losses, improving the overall efficiency of the module.
4. **Motor Control**:
In industrial and household motor control applications, this MOSFET is able to drive high-current motors and provide precise current control, especially in application scenarios that require fast response and efficient operation, such as power tools and industrial automation equipment.
5. **Solar Inverters**:
In solar photovoltaic systems, the F1324S-VB can be used in inverter circuits to handle high currents and provide low-loss conversion, improving the system's power generation efficiency, especially in high-power applications.
The design of the F1324S-VB enables it to provide excellent performance in a variety of high-current, high-efficiency applications, ensuring system reliability and long life under harsh conditions.
Technical support:
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