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F1302S-VB Product details
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Product Introduction
**F1302S-VB** is a high-performance N-Channel MOSFET in TO263 package, suitable for high current and high-efficiency applications. This MOSFET adopts Trench technology and has excellent switching performance and low on-resistance. Its drain-source voltage (VDS) is 30V and the gate-source voltage (VGS) is ±20V, supporting a maximum drain current of up to 150A. The threshold voltage (Vth) is 1.7V, allowing it to be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 3.2mΩ at VGS=4.5V and 2.3mΩ at VGS=10V, ensuring efficient current switching and low power operation.
**F1302S-VB** is a high-performance N-Channel MOSFET in TO263 package, suitable for high current and high-efficiency applications. This MOSFET adopts Trench technology and has excellent switching performance and low on-resistance. Its drain-source voltage (VDS) is 30V and the gate-source voltage (VGS) is ±20V, supporting a maximum drain current of up to 150A. The threshold voltage (Vth) is 1.7V, allowing it to be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 3.2mΩ at VGS=4.5V and 2.3mΩ at VGS=10V, ensuring efficient current switching and low power operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: F1302S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 150A
- **Technology**: Trench
- **Model**: F1302S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**F1302S-VB**'s high efficiency and excellent performance make it suitable for multiple electronic applications. Here are a few specific application examples:
1. **Power management system**: In power management systems, such as DC-DC converters and power switch modules, the low on-resistance and high current carrying capacity of F1302S-VB can ensure efficient power conversion and stable power output, improving system efficiency and reliability.
2. **Electric vehicles**: In the battery management and motor drive systems of electric vehicles, this MOSFET can handle high current demands, provide stable and reliable switching control, and improve the overall performance and endurance of electric vehicles.
3. **Industrial power supply**: In industrial power supply applications, the high current handling capability and low on-resistance of F1302S-VB help improve the efficiency of the power system, and is suitable for the switching and control of high-power power supplies to ensure stable power supply.
4. **High-power switching circuit**: In high-power switching circuits, such as high-power amplifiers and motor control circuits, the low RDS(ON) value and high current capability of this MOSFET enable it to efficiently switch large currents, reduce power consumption and heat, and improve the overall performance and reliability of the equipment.
5. **UPS (Uninterruptible Power Supply)**: In an uninterruptible power supply system (UPS), the F1302S-VB can provide efficient switching control, ensuring stable switching to backup power when power is interrupted, protecting the normal operation of critical equipment.
**F1302S-VB**'s high efficiency and excellent performance make it suitable for multiple electronic applications. Here are a few specific application examples:
1. **Power management system**: In power management systems, such as DC-DC converters and power switch modules, the low on-resistance and high current carrying capacity of F1302S-VB can ensure efficient power conversion and stable power output, improving system efficiency and reliability.
2. **Electric vehicles**: In the battery management and motor drive systems of electric vehicles, this MOSFET can handle high current demands, provide stable and reliable switching control, and improve the overall performance and endurance of electric vehicles.
3. **Industrial power supply**: In industrial power supply applications, the high current handling capability and low on-resistance of F1302S-VB help improve the efficiency of the power system, and is suitable for the switching and control of high-power power supplies to ensure stable power supply.
4. **High-power switching circuit**: In high-power switching circuits, such as high-power amplifiers and motor control circuits, the low RDS(ON) value and high current capability of this MOSFET enable it to efficiently switch large currents, reduce power consumption and heat, and improve the overall performance and reliability of the equipment.
5. **UPS (Uninterruptible Power Supply)**: In an uninterruptible power supply system (UPS), the F1302S-VB can provide efficient switching control, ensuring stable switching to backup power when power is interrupted, protecting the normal operation of critical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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