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F12NM60N-VB Product details
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Product Introduction
**F12NM60N-VB** is a single N-channel MOSFET packaged in TO220F. This MOSFET uses Plannar technology and is designed for high voltage environments. Its maximum drain-source voltage (VDS) is 650V and supports a gate-source voltage (VGS) of ±30V. The threshold voltage (Vth) of the MOSFET is 3.5V, and at VGS = 10V, the on-resistance (RDS(ON)) is 320mΩ and the maximum drain current (ID) is 20A. The F12NM60N-VB is suitable for applications requiring high voltage and medium current, providing reliable switching performance and stability.
**F12NM60N-VB** is a single N-channel MOSFET packaged in TO220F. This MOSFET uses Plannar technology and is designed for high voltage environments. Its maximum drain-source voltage (VDS) is 650V and supports a gate-source voltage (VGS) of ±30V. The threshold voltage (Vth) of the MOSFET is 3.5V, and at VGS = 10V, the on-resistance (RDS(ON)) is 320mΩ and the maximum drain current (ID) is 20A. The F12NM60N-VB is suitable for applications requiring high voltage and medium current, providing reliable switching performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: F12NM60N-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
- **Model**: F12NM60N-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications：
Applications and Module Examples
1. **High-Voltage Power Supplies**:
The high drain-source voltage (VDS) of the F12NM60N-VB makes it very suitable for use in high-voltage switching power supplies. It can effectively handle switching operations under high voltages, ensuring the stability and reliability of the power supply system in high-voltage environments, and is widely used in industrial power supplies and power conversion systems.
2. **Inverters**:
In inverters, this MOSFET is able to handle high voltages and provide reliable switching performance. It is suitable for power conversion and power conditioning, ensuring stable operation of inverters in high-voltage applications, especially in solar inverters and wind inverters.
3. **Power Factor Correction (PFC)**:
Due to its high voltage tolerance, the F12NM60N-VB is suitable for power factor correction circuits. It can work stably under high voltage, help improve power factor and reduce power loss, and improve the efficiency of the overall power system.
4. **Electric Vehicle Drive Systems**:
In electric vehicle drive systems, this MOSFET can handle high voltage and provide reliable switching performance, suitable for battery management systems and motor drive circuits, ensuring efficient current control and system stability.
5. **Home Appliances**:
F12NM60N-VB is also suitable for high-voltage switching applications in home appliances, such as welding machines and microwave ovens. It can provide stable switching operation in high voltage environments to ensure the safety and reliability of the equipment.
These applications give full play to the high voltage handling capability and stable switching performance of F12NM60N-VB, ensuring reliability and system efficiency in high voltage and high current environments.
1. **High-Voltage Power Supplies**:
The high drain-source voltage (VDS) of the F12NM60N-VB makes it very suitable for use in high-voltage switching power supplies. It can effectively handle switching operations under high voltages, ensuring the stability and reliability of the power supply system in high-voltage environments, and is widely used in industrial power supplies and power conversion systems.
2. **Inverters**:
In inverters, this MOSFET is able to handle high voltages and provide reliable switching performance. It is suitable for power conversion and power conditioning, ensuring stable operation of inverters in high-voltage applications, especially in solar inverters and wind inverters.
3. **Power Factor Correction (PFC)**:
Due to its high voltage tolerance, the F12NM60N-VB is suitable for power factor correction circuits. It can work stably under high voltage, help improve power factor and reduce power loss, and improve the efficiency of the overall power system.
4. **Electric Vehicle Drive Systems**:
In electric vehicle drive systems, this MOSFET can handle high voltage and provide reliable switching performance, suitable for battery management systems and motor drive circuits, ensuring efficient current control and system stability.
5. **Home Appliances**:
F12NM60N-VB is also suitable for high-voltage switching applications in home appliances, such as welding machines and microwave ovens. It can provide stable switching operation in high voltage environments to ensure the safety and reliability of the equipment.
These applications give full play to the high voltage handling capability and stable switching performance of F12NM60N-VB, ensuring reliability and system efficiency in high voltage and high current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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