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F12NM50N-VB Product details
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Product Introduction
**Model: F12NM50N-VB**
**Package: TO220F**
**Configuration: Unipolar N-channel MOSFET**
**VDS: 550V**
**VGS: ±30V**
**Vth: 3V**
**RDS(ON) @ VGS=10V: 260mΩ**
**ID: 18A**
**Technology: Planar Technology**
F12NM50N-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage applications. Its VDS is up to 550V, suitable for stable operation in high voltage environment. Although its on-resistance is 260mΩ, which is relatively high, the application of Planar technology ensures its reliability and stability in switching operation, making it suitable for use in high-voltage circuits.
**Model: F12NM50N-VB**
**Package: TO220F**
**Configuration: Unipolar N-channel MOSFET**
**VDS: 550V**
**VGS: ±30V**
**Vth: 3V**
**RDS(ON) @ VGS=10V: 260mΩ**
**ID: 18A**
**Technology: Planar Technology**
F12NM50N-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage applications. Its VDS is up to 550V, suitable for stable operation in high voltage environment. Although its on-resistance is 260mΩ, which is relatively high, the application of Planar technology ensures its reliability and stability in switching operation, making it suitable for use in high-voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package: ** TO220F
- **Configuration: ** Unipolar N-channel
- **Drain-source voltage (VDS): ** 550V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 260mΩ @ VGS=10V
- **Drain current (ID): ** 18A
- **Technology: ** Planar technology
- **Package: ** TO220F
- **Configuration: ** Unipolar N-channel
- **Drain-source voltage (VDS): ** 550V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 260mΩ @ VGS=10V
- **Drain current (ID): ** 18A
- **Technology: ** Planar technology
Domain and module applications：
Applications and modules
1. **High-voltage switching circuits:** The F12NM50N-VB is suitable for high-voltage switching circuits due to its high withstand voltage of 550V. In power converters, lighting control systems or power switching modules, this MOSFET can be used as a switching element to reliably handle current switching in high-voltage environments.
2. **Power inverters:** In power inverter applications, such as photovoltaic inverters or wind power inverters, the F12NM50N-VB is able to handle high-voltage inputs and perform effective voltage conversion. Its high withstand voltage characteristics make it suitable for use in high-power, high-voltage inverter designs.
3. **Power supply systems:** In high-voltage power supply designs, this MOSFET is able to effectively handle high-voltage inputs. Its stable switching performance is suitable for use in high-power power modules and power management systems to ensure the stability of the power supply.
4. **Motor drive:** The F12NM50N-VB is suitable for motor drive applications that require high voltage, especially motor control systems that need to withstand higher voltages. Its high drain current carrying capacity enables it to handle medium to high power motor drive tasks.
5. **High-voltage power amplifier:** In high-voltage power amplifier applications, such as broadcast transmitters and industrial power amplifiers, the F12NM50N-VB can be used as a switch or power regulation element to handle high voltage and high power requirements to ensure stable operation of the power amplifier.
With its high voltage tolerance and stable switching performance, the F12NM50N-VB is able to provide reliable solutions in a variety of high voltage applications, providing effective support for power management and power control.
1. **High-voltage switching circuits:** The F12NM50N-VB is suitable for high-voltage switching circuits due to its high withstand voltage of 550V. In power converters, lighting control systems or power switching modules, this MOSFET can be used as a switching element to reliably handle current switching in high-voltage environments.
2. **Power inverters:** In power inverter applications, such as photovoltaic inverters or wind power inverters, the F12NM50N-VB is able to handle high-voltage inputs and perform effective voltage conversion. Its high withstand voltage characteristics make it suitable for use in high-power, high-voltage inverter designs.
3. **Power supply systems:** In high-voltage power supply designs, this MOSFET is able to effectively handle high-voltage inputs. Its stable switching performance is suitable for use in high-power power modules and power management systems to ensure the stability of the power supply.
4. **Motor drive:** The F12NM50N-VB is suitable for motor drive applications that require high voltage, especially motor control systems that need to withstand higher voltages. Its high drain current carrying capacity enables it to handle medium to high power motor drive tasks.
5. **High-voltage power amplifier:** In high-voltage power amplifier applications, such as broadcast transmitters and industrial power amplifiers, the F12NM50N-VB can be used as a switch or power regulation element to handle high voltage and high power requirements to ensure stable operation of the power amplifier.
With its high voltage tolerance and stable switching performance, the F12NM50N-VB is able to provide reliable solutions in a variety of high voltage applications, providing effective support for power management and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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