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F12N65-VB Product details
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F12N65-VB MOSFET Product Introduction
**F12N65-VB** is a high-voltage N-Channel MOSFET in a TO220F package. The MOSFET can withstand a drain-source voltage (V_DS) of up to 650V and supports a gate-source voltage (V_GS) of ±30V. Its threshold voltage (V_th) is 3.5V, ensuring stable operation under appropriate gate voltage. The F12N65-VB uses Plannar technology. Although its on-resistance (R_DS(ON)) is relatively high at 680mΩ, it can handle drain currents of up to 12A, making it suitable for high-voltage applications where stable switching performance is required.
**F12N65-VB** is a high-voltage N-Channel MOSFET in a TO220F package. The MOSFET can withstand a drain-source voltage (V_DS) of up to 650V and supports a gate-source voltage (V_GS) of ±30V. Its threshold voltage (V_th) is 3.5V, ensuring stable operation under appropriate gate voltage. The F12N65-VB uses Plannar technology. Although its on-resistance (R_DS(ON)) is relatively high at 680mΩ, it can handle drain currents of up to 12A, making it suitable for high-voltage applications where stable switching performance is required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 680mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 12A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 680mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 12A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
1. **High voltage power switch**: The high voltage withstand capability of F12N65-VB makes it very suitable for high voltage power switch applications. For example, in high voltage DC-DC converters and high voltage power supply systems, this MOSFET can provide reliable switching control, handle voltages up to 650V, and ensure the safety and stability of the system.
2. **Power electronic conversion**: In power electronic conversion systems, such as high power inverters and power converters, F12N65-VB is able to handle higher voltage and current requirements. Although its on-resistance is high, its voltage withstand capability and high drain current make it suitable for switching operations in high voltage occasions, ensuring efficient power conversion and stable system performance.
3. **High voltage protection circuit**: Due to its high voltage withstand characteristics, F12N65-VB is suitable for use in high voltage protection circuits, such as overvoltage protection circuits and power protection modules. It can protect circuit components from damage under high voltage conditions and provide stable switching performance.
4. **Industrial power system**: In industrial power systems, this MOSFET can be used for switching and controlling high voltage power supplies to ensure stable operation of the system under high voltage conditions. It is suitable for power management and control circuits of industrial equipment, handling high power loads and switching operations in high voltage environments.
These application examples demonstrate the reliability and applicability of the F12N65-VB in high voltage environments, especially in situations where high voltage handling capabilities and stable switching performance are required.
1. **High voltage power switch**: The high voltage withstand capability of F12N65-VB makes it very suitable for high voltage power switch applications. For example, in high voltage DC-DC converters and high voltage power supply systems, this MOSFET can provide reliable switching control, handle voltages up to 650V, and ensure the safety and stability of the system.
2. **Power electronic conversion**: In power electronic conversion systems, such as high power inverters and power converters, F12N65-VB is able to handle higher voltage and current requirements. Although its on-resistance is high, its voltage withstand capability and high drain current make it suitable for switching operations in high voltage occasions, ensuring efficient power conversion and stable system performance.
3. **High voltage protection circuit**: Due to its high voltage withstand characteristics, F12N65-VB is suitable for use in high voltage protection circuits, such as overvoltage protection circuits and power protection modules. It can protect circuit components from damage under high voltage conditions and provide stable switching performance.
4. **Industrial power system**: In industrial power systems, this MOSFET can be used for switching and controlling high voltage power supplies to ensure stable operation of the system under high voltage conditions. It is suitable for power management and control circuits of industrial equipment, handling high power loads and switching operations in high voltage environments.
These application examples demonstrate the reliability and applicability of the F12N65-VB in high voltage environments, especially in situations where high voltage handling capabilities and stable switching performance are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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