中文
English
F11NM80-VB Product details
Back to previous pageProduct introduction：
F11NM80-VB MOSFET Product Introduction
F11NM80-VB is a high withstand voltage single N-channel MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 800V and can operate stably in extreme voltage environments. The gate-source voltage (VGS) of this MOSFET is ±30V, allowing flexible gate control. Its threshold voltage (Vth) is 3.5V, while the on-resistance (RDS(ON)) is 370mΩ (at VGS=10V), which is suitable for applications that require high withstand voltage but do not have extreme requirements for on-resistance. The maximum continuous drain current (ID) of F11NM80-VB is 15A, making it suitable for high-power power management and switching applications.
F11NM80-VB is a high withstand voltage single N-channel MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 800V and can operate stably in extreme voltage environments. The gate-source voltage (VGS) of this MOSFET is ±30V, allowing flexible gate control. Its threshold voltage (Vth) is 3.5V, while the on-resistance (RDS(ON)) is 370mΩ (at VGS=10V), which is suitable for applications that require high withstand voltage but do not have extreme requirements for on-resistance. The maximum continuous drain current (ID) of F11NM80-VB is 15A, making it suitable for high-power power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
F11NM80-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI (super junction multilayer structure)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI (super junction multilayer structure)
Domain and module applications：
Application fields and modules of F11NM80-VB
The high withstand voltage capability and stability of F11NM80-VB MOSFET make it important in many fields and modules:
1. **High voltage power management**: Due to its drain-source voltage capability of up to 800V, F11NM80-VB is very suitable for switching elements in high voltage power management systems, such as high voltage DC-DC converters, power regulators and power switches. Its high voltage carrying capacity can handle harsh power supply environments.
2. **Industrial power**: In industrial power applications, F11NM80-VB is able to handle high voltage and current loads and is suitable for industrial-grade power modules and power control systems. Its high withstand voltage characteristics ensure stability and reliability in industrial equipment.
3. **High voltage motor drive**: Although the on-resistance is high, F11NM80-VB is still suitable for motor drive applications that require high voltage, especially in the drive system of high voltage motors, providing reliable switching control for the motor.
4. **Power Factor Correction (PFC)**: In the PFC circuit, F11NM80-VB can be used as a high-voltage switching element to help improve the power factor of the power supply and reduce harmonic interference. Its high voltage tolerance is suitable for high-voltage PFC applications.
In summary, F11NM80-VB MOSFET is widely used in high-voltage electronic design and power management systems with its high voltage resistance and stable performance, and is suitable for providing reliable switching and control functions in high-voltage environments.
The high withstand voltage capability and stability of F11NM80-VB MOSFET make it important in many fields and modules:
1. **High voltage power management**: Due to its drain-source voltage capability of up to 800V, F11NM80-VB is very suitable for switching elements in high voltage power management systems, such as high voltage DC-DC converters, power regulators and power switches. Its high voltage carrying capacity can handle harsh power supply environments.
2. **Industrial power**: In industrial power applications, F11NM80-VB is able to handle high voltage and current loads and is suitable for industrial-grade power modules and power control systems. Its high withstand voltage characteristics ensure stability and reliability in industrial equipment.
3. **High voltage motor drive**: Although the on-resistance is high, F11NM80-VB is still suitable for motor drive applications that require high voltage, especially in the drive system of high voltage motors, providing reliable switching control for the motor.
4. **Power Factor Correction (PFC)**: In the PFC circuit, F11NM80-VB can be used as a high-voltage switching element to help improve the power factor of the power supply and reduce harmonic interference. Its high voltage tolerance is suitable for high-voltage PFC applications.
In summary, F11NM80-VB MOSFET is widely used in high-voltage electronic design and power management systems with its high voltage resistance and stable performance, and is suitable for providing reliable switching and control functions in high-voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
