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F11NM60N-VB Product details
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Product Introduction:
F11NM60N-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. Its rated drain-source voltage is up to 650V, and the gate-source voltage range is ±30V. This MOSFET uses planar technology and is suitable for high voltage switching and power conversion applications. The higher on-resistance and medium current carrying capacity of F11NM60N-VB make it suitable for circuits requiring high voltage protection and control.
F11NM60N-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. Its rated drain-source voltage is up to 650V, and the gate-source voltage range is ±30V. This MOSFET uses planar technology and is suitable for high voltage switching and power conversion applications. The higher on-resistance and medium current carrying capacity of F11NM60N-VB make it suitable for circuits requiring high voltage protection and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Plannar
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Plannar
Domain and module applications：
Applications and modules:
1. **High-voltage power switch**: The F11NM60N-VB is suitable for high-voltage power switch applications such as switch mode power supplies (SMPS) and high-voltage DC-DC converters. Its high voltage rating can handle switching operations in high-voltage environments while providing the necessary voltage protection and reliability.
2. **Power converter**: In power converters, such as inverters and high-voltage power modules, the high voltage withstand capability and medium current carrying capacity of this MOSFET enable it to stably convert and regulate power, ensuring efficient operation of the system.
3. **Motor drive**: The F11NM60N-VB can also be used in motor drive circuits, especially those that require high-voltage protection. Despite its relatively high on-resistance, it is able to provide reliable current control and protection functions in high-voltage environments.
4. **Load switch and protection circuit**: In load switch and overcurrent protection circuits, this MOSFET can cope with the switching needs in high-voltage environments and protect the circuit from high voltage damage. Its higher threshold voltage and lower current capability are suitable for medium and high power load control applications.
1. **High-voltage power switch**: The F11NM60N-VB is suitable for high-voltage power switch applications such as switch mode power supplies (SMPS) and high-voltage DC-DC converters. Its high voltage rating can handle switching operations in high-voltage environments while providing the necessary voltage protection and reliability.
2. **Power converter**: In power converters, such as inverters and high-voltage power modules, the high voltage withstand capability and medium current carrying capacity of this MOSFET enable it to stably convert and regulate power, ensuring efficient operation of the system.
3. **Motor drive**: The F11NM60N-VB can also be used in motor drive circuits, especially those that require high-voltage protection. Despite its relatively high on-resistance, it is able to provide reliable current control and protection functions in high-voltage environments.
4. **Load switch and protection circuit**: In load switch and overcurrent protection circuits, this MOSFET can cope with the switching needs in high-voltage environments and protect the circuit from high voltage damage. Its higher threshold voltage and lower current capability are suitable for medium and high power load control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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