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F1104S-VB Product details

Product introduction:

Product Introduction

**F1104S-VB** is a high-performance N-Channel MOSFET in a TO263 package. This MOSFET is designed as a single N-Channel configuration with a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 2.5V, enabling it to turn on at a relatively low gate voltage. The F1104S-VB uses Trench technology to provide low on-resistance (RDS(ON)), with RDS(ON) of 6mΩ at VGS of 4.5V and RDS(ON) of 5mΩ at VGS of 10V. This low on-resistance significantly reduces power consumption and improves efficiency. In addition, the maximum drain current (ID) of this MOSFET is 100A, making it suitable for high-current switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 2.5V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Model**: F1104S-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 6mΩ
- @ VGS = 10V: 5mΩ
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

**F1104S-VB**'s high performance characteristics make it very suitable for multiple application fields and modules:

1. **High-power switching power supply**: F1104S-VB's low on-resistance and high current carrying capacity make it an ideal choice for high-power switching power supplies. In power supply design, this can significantly reduce switching losses, improve energy efficiency, and provide stable power output.

2. **Motor drive system**: In motor drive applications, this MOSFET is able to handle high currents and provide efficient switching functions, suitable for driving and controlling motors, ensuring the stability and efficiency of motor operation.

3. **DC-DC converter**: F1104S-VB can be used as a switching element in a DC-DC converter, and its low RDS(ON) characteristics help reduce conversion losses and improve the power conversion efficiency and stability of the system.

4. **Power Management System**: In power management and distribution systems, the high current capability and low power consumption of this MOSFET make it a key component for battery management, power distribution and power monitoring systems, improving the overall performance and reliability of the system.

5. **Automotive Electronics**: In automotive electronic applications, such as motor control and power distribution systems, the F1104S-VB is able to handle high currents and meet the high efficiency and high reliability requirements in the automotive environment.

The excellent performance of the F1104S-VB makes it an ideal choice for switching applications that require high current and low power consumption, and can provide reliable solutions in a variety of high-efficiency power supplies and switch control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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