F1104L-VB Product details
Product introduction:
**F1104L-VB** is a high-performance unipolar N-type MOSFET in a TO262 package, designed for applications requiring high current and high efficiency. The device has a drain-source voltage (VDS) of 40V, suitable for medium voltage switching and power management applications. The gate-source voltage (VGS) range of the MOSFET is ±20V, providing good voltage resistance characteristics. Its threshold voltage (Vth) is 2.5V, which allows it to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 5mΩ (VGS = 10V), which significantly reduces power loss and improves system efficiency. The maximum drain current (ID) is 100A, suitable for handling high current loads. The F1104L-VB uses Trench technology to enhance its switching performance and current carrying capacity.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Package**: TO262
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications:
**1. Power Converters**: The low on-resistance and high current capability of the F1104L-VB make it ideal for use in power converters such as DC-DC converters and switching power supplies. These features help reduce energy loss and improve conversion efficiency, especially in applications that require high current and medium voltage.
**2. Motor Drives**: In motor control systems, such as high-power DC motor drivers or stepper motor controllers, the F1104L-VB provides the necessary high current handling capability and low power consumption characteristics. This makes it an ideal choice to ensure stable and efficient operation of the motor while reducing heat generation and power losses.
**3. Load Switches**: Due to its high current handling capability and extremely low on-resistance, the F1104L-VB is suitable for high-power load switching applications such as power switch modules and high-power LED lighting systems. It is able to efficiently control load current, provide reliable switching functions, and perform well in high-power applications.
**4. Battery Management System**: In the battery management system, the low RDS(ON) and high current capability of the F1104L-VB help to efficiently manage the battery charge and discharge process, ensuring the safe use of the battery and extending its life. The MOSFET can also be used in battery protection circuits to prevent overcharge or overdischarge, thereby improving system reliability.
These application examples show the important role of the F1104L-VB MOSFET in the field of high current and high efficiency requirements. Its excellent performance makes it a key component in various applications such as power management, motor drive, load switching and battery management.
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