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F10N65-VB Product details
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Product Introduction
**Model: F10N65-VB**
**Package: TO220F**
**Configuration: Unipolar N-channel MOSFET**
**VDS: 650V**
**VGS: ±30V**
**Vth: 3.5V**
**RDS(ON) @ VGS=10V: 830mΩ**
**ID: 10A**
**Technology: Planar Technology**
F10N65-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high voltage applications. Its VDS is as high as 650V, and it can work stably in a high voltage environment. Despite its high on-resistance, it provides reliable switching performance and stability with Planar technology, making it excellent in applications in high voltage circuits.
**Model: F10N65-VB**
**Package: TO220F**
**Configuration: Unipolar N-channel MOSFET**
**VDS: 650V**
**VGS: ±30V**
**Vth: 3.5V**
**RDS(ON) @ VGS=10V: 830mΩ**
**ID: 10A**
**Technology: Planar Technology**
F10N65-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high voltage applications. Its VDS is as high as 650V, and it can work stably in a high voltage environment. Despite its high on-resistance, it provides reliable switching performance and stability with Planar technology, making it excellent in applications in high voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package: ** TO220F
- **Configuration: ** Unipolar N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 830mΩ @ VGS=10V
- **Drain current (ID): ** 10A
- **Technology: ** Planar technology
- **Package: ** TO220F
- **Configuration: ** Unipolar N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 830mΩ @ VGS=10V
- **Drain current (ID): ** 10A
- **Technology: ** Planar technology
Domain and module applications：
Applications and modules
1. **High-voltage switch applications:** The F10N65-VB is ideal for high-voltage switching circuits due to its high withstand voltage of 650V. For example, in power converters and high-voltage switch modules, this MOSFET can be used as a switching element to help achieve stable high-voltage switching.
2. **Power inverters:** In power inverter applications, such as solar inverters or wind power inverters, the high withstand voltage characteristics of the F10N65-VB enable it to handle high voltage inputs and perform efficient voltage conversion. Suitable for inverter modules that require high voltage and high power handling.
3. **Power supply systems:** This MOSFET is suitable for high-voltage power supply designs and can stably handle high voltage inputs. Its switching performance performs well in high-power power modules and power management systems.
4. **Motor control:** Although the on-resistance of F10N65-VB is relatively high, its high voltage withstand capability makes it suitable for motor control systems, especially for high voltage motor drive and control applications.
5. **High voltage power amplifier:** In high voltage power amplifier applications, F10N65-VB can be used as a switch or power regulation element to handle high voltage and high power requirements, such as broadcast transmitters and industrial power amplifiers.
With its high voltage withstand and stable switching performance, F10N65-VB is suitable for various high voltage application scenarios, providing a reliable solution for power management and power control.
1. **High-voltage switch applications:** The F10N65-VB is ideal for high-voltage switching circuits due to its high withstand voltage of 650V. For example, in power converters and high-voltage switch modules, this MOSFET can be used as a switching element to help achieve stable high-voltage switching.
2. **Power inverters:** In power inverter applications, such as solar inverters or wind power inverters, the high withstand voltage characteristics of the F10N65-VB enable it to handle high voltage inputs and perform efficient voltage conversion. Suitable for inverter modules that require high voltage and high power handling.
3. **Power supply systems:** This MOSFET is suitable for high-voltage power supply designs and can stably handle high voltage inputs. Its switching performance performs well in high-power power modules and power management systems.
4. **Motor control:** Although the on-resistance of F10N65-VB is relatively high, its high voltage withstand capability makes it suitable for motor control systems, especially for high voltage motor drive and control applications.
5. **High voltage power amplifier:** In high voltage power amplifier applications, F10N65-VB can be used as a switch or power regulation element to handle high voltage and high power requirements, such as broadcast transmitters and industrial power amplifiers.
With its high voltage withstand and stable switching performance, F10N65-VB is suitable for various high voltage application scenarios, providing a reliable solution for power management and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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