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F1018ES-VB Product details
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F1018ES-VB MOSFET Product Introduction
The F1018ES-VB is a high-performance unipolar N-channel MOSFET in TO263 package. This MOSFET has high current handling capability and low on-resistance, suitable for high-power and high-efficiency switching applications. Its drain-source voltage (VDS) is 60V, which can handle higher voltages, combined with the gate-source voltage (VGS) of ±20V to provide a flexible application range. The threshold voltage (Vth) is 3V, which enables stable conduction under common gate voltages. Using Trench technology, the F1018ES-VB provides excellent switching performance and low power consumption characteristics.
The F1018ES-VB is a high-performance unipolar N-channel MOSFET in TO263 package. This MOSFET has high current handling capability and low on-resistance, suitable for high-power and high-efficiency switching applications. Its drain-source voltage (VDS) is 60V, which can handle higher voltages, combined with the gate-source voltage (VGS) of ±20V to provide a flexible application range. The threshold voltage (Vth) is 3V, which enables stable conduction under common gate voltages. Using Trench technology, the F1018ES-VB provides excellent switching performance and low power consumption characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
F1018ES-VB MOSFET Detailed parameter description
- **Package type (Package):** TO263
- **Configuration (Configuration):** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 4mΩ @ VGS=10V
- **Drain current (ID):** 150A
- **Technology type (Technology):** Trench
- **Package type (Package):** TO263
- **Configuration (Configuration):** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 4mΩ @ VGS=10V
- **Drain current (ID):** 150A
- **Technology type (Technology):** Trench
Domain and module applications：
F1018ES-VB MOSFET Applications and Module Examples
The high current handling capability and low on-resistance of the F1018ES-VB MOSFET make it very valuable in multiple high-power and high-efficiency applications. Here are a few typical application areas and modules:
1. **High-Power Power Converters:** In high-power DC-DC converters and switching power supplies, the F1018ES-VB is able to handle high currents and reduce power losses. It performs well in server power supplies, power adapters, and industrial power management systems, improving the overall efficiency of the system.
2. **Motor Drives:** This MOSFET is suitable for motor drive circuits, especially in applications that need to handle high currents, such as electric vehicles, power tools, and industrial motor control systems, providing reliable switching performance and high-efficiency control.
3. **Power Management Systems:** The F1018ES-VB can be used in battery management and power distribution modules to help achieve efficient power switching and current management. Its low on-resistance helps reduce power loss and improve system stability and efficiency.
4. **High-Efficiency Switching Power Supplies:** In switching power supply designs that require high efficiency and low power consumption, the F1018ES-VB provides excellent performance and is suitable for high-power LED drivers, power conversion modules, and other high-efficiency power supply applications.
The excellent performance of the F1018ES-VB MOSFET makes it an important component in modern high-power electronic systems and is widely used in a variety of application scenarios that require high current handling and low power consumption.
The high current handling capability and low on-resistance of the F1018ES-VB MOSFET make it very valuable in multiple high-power and high-efficiency applications. Here are a few typical application areas and modules:
1. **High-Power Power Converters:** In high-power DC-DC converters and switching power supplies, the F1018ES-VB is able to handle high currents and reduce power losses. It performs well in server power supplies, power adapters, and industrial power management systems, improving the overall efficiency of the system.
2. **Motor Drives:** This MOSFET is suitable for motor drive circuits, especially in applications that need to handle high currents, such as electric vehicles, power tools, and industrial motor control systems, providing reliable switching performance and high-efficiency control.
3. **Power Management Systems:** The F1018ES-VB can be used in battery management and power distribution modules to help achieve efficient power switching and current management. Its low on-resistance helps reduce power loss and improve system stability and efficiency.
4. **High-Efficiency Switching Power Supplies:** In switching power supply designs that require high efficiency and low power consumption, the F1018ES-VB provides excellent performance and is suitable for high-power LED drivers, power conversion modules, and other high-efficiency power supply applications.
The excellent performance of the F1018ES-VB MOSFET makes it an important component in modern high-power electronic systems and is widely used in a variety of application scenarios that require high current handling and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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