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F1010ZS-VB Product details
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Product Introduction
**F1010ZS-VB** is a high-performance N-Channel MOSFET packaged in TO263. This MOSFET uses Trench technology and is designed to handle high current and high voltage applications, providing efficient switching performance. Its drain-source voltage (VDS) is 60V and its gate-source voltage (VGS) is ±20V. The threshold voltage (Vth) of this MOSFET is 3V, ensuring that it can be turned on at a moderate gate voltage. Its on-resistance (RDS(ON)) is 4mΩ at VGS=10V, and it can support a maximum drain current of up to 150A, making it suitable for various electronic designs that require high efficiency and high power handling.
**F1010ZS-VB** is a high-performance N-Channel MOSFET packaged in TO263. This MOSFET uses Trench technology and is designed to handle high current and high voltage applications, providing efficient switching performance. Its drain-source voltage (VDS) is 60V and its gate-source voltage (VGS) is ±20V. The threshold voltage (Vth) of this MOSFET is 3V, ensuring that it can be turned on at a moderate gate voltage. Its on-resistance (RDS(ON)) is 4mΩ at VGS=10V, and it can support a maximum drain current of up to 150A, making it suitable for various electronic designs that require high efficiency and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: F1010ZS-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 150A
- **Technology**: Trench
- **Model**: F1010ZS-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
**F1010ZS-VB**'s excellent performance makes it suitable for multiple high-power and high-efficiency application scenarios. Here are a few specific application examples:
1. **Power management and conversion**: In power management and conversion modules, the low on-resistance and high current carrying capacity of F1010ZS-VB make it very suitable for DC-DC converters and power switches, ensuring efficient power conversion and stable power output.
2. **Electric vehicles**: In the battery management system and motor drive system of electric vehicles, this MOSFET can effectively handle high current demands and provide stable and reliable switching control, thereby improving the overall performance and endurance of electric vehicles.
3. **Industrial power supply system**: In industrial power supply systems, the high current handling capability and low on-resistance of F1010ZS-VB help improve the overall efficiency of the power supply, and are suitable for the switching and control of high-power power supplies to ensure efficient operation of the system.
4. **High-power switching applications**: In high-power switching applications, such as high-power amplifiers and motor drive circuits, this MOSFET can efficiently handle large currents and reduce power consumption and heat, improving the operating efficiency and reliability of the equipment.
5. **UPS (Uninterruptible Power Supply)**: In an uninterruptible power supply (UPS) system, the F1010ZS-VB can provide efficient switching control, ensuring stable switching to backup power when power is interrupted, protecting the normal operation of critical equipment.
**F1010ZS-VB**'s excellent performance makes it suitable for multiple high-power and high-efficiency application scenarios. Here are a few specific application examples:
1. **Power management and conversion**: In power management and conversion modules, the low on-resistance and high current carrying capacity of F1010ZS-VB make it very suitable for DC-DC converters and power switches, ensuring efficient power conversion and stable power output.
2. **Electric vehicles**: In the battery management system and motor drive system of electric vehicles, this MOSFET can effectively handle high current demands and provide stable and reliable switching control, thereby improving the overall performance and endurance of electric vehicles.
3. **Industrial power supply system**: In industrial power supply systems, the high current handling capability and low on-resistance of F1010ZS-VB help improve the overall efficiency of the power supply, and are suitable for the switching and control of high-power power supplies to ensure efficient operation of the system.
4. **High-power switching applications**: In high-power switching applications, such as high-power amplifiers and motor drive circuits, this MOSFET can efficiently handle large currents and reduce power consumption and heat, improving the operating efficiency and reliability of the equipment.
5. **UPS (Uninterruptible Power Supply)**: In an uninterruptible power supply (UPS) system, the F1010ZS-VB can provide efficient switching control, ensuring stable switching to backup power when power is interrupted, protecting the normal operation of critical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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