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F1010EZS-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
F1010EZS-VB is a single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its rated drain-source voltage is 60V and the gate-source voltage range is ±20V. F1010EZS-VB adopts advanced trench technology, with extremely low on-resistance and extremely high drain current handling capability. Its low RDS(ON) characteristics and high current capability make it particularly suitable for high power switching and power management systems.
F1010EZS-VB is a single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its rated drain-source voltage is 60V and the gate-source voltage range is ±20V. F1010EZS-VB adopts advanced trench technology, with extremely low on-resistance and extremely high drain current handling capability. Its low RDS(ON) characteristics and high current capability make it particularly suitable for high power switching and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Applications and modules:
1. **High-efficiency power management**: The F1010EZS-VB is an indispensable component in power management modules, especially in DC-DC converters and high-efficiency power supplies. Due to its low on-resistance and high current handling capability, this MOSFET can effectively reduce power loss and improve power conversion efficiency, thereby improving the performance and stability of the overall system.
2. **Motor drive applications**: In motor drive circuits that require high-current switching, the F1010EZS-VB can efficiently control the start-up and operation of the motor due to its high current carrying capacity and low on-resistance, and is particularly suitable for driving high-power DC motors and stepper motors.
3. **Power switching and load control**: This MOSFET performs well in high-power switching and load control applications. Its high current capability and low on-resistance enable it to provide stable performance in load switching, suitable for power protection circuits and current management systems.
4. **Inverter and high-power power module**: F1010EZS-VB is also suitable for the design of inverter and high-power power module. Its high voltage and high current capabilities can meet the inverter's requirements for high current and high efficiency during the conversion process, thereby improving the overall performance and reliability of the system.
1. **High-efficiency power management**: The F1010EZS-VB is an indispensable component in power management modules, especially in DC-DC converters and high-efficiency power supplies. Due to its low on-resistance and high current handling capability, this MOSFET can effectively reduce power loss and improve power conversion efficiency, thereby improving the performance and stability of the overall system.
2. **Motor drive applications**: In motor drive circuits that require high-current switching, the F1010EZS-VB can efficiently control the start-up and operation of the motor due to its high current carrying capacity and low on-resistance, and is particularly suitable for driving high-power DC motors and stepper motors.
3. **Power switching and load control**: This MOSFET performs well in high-power switching and load control applications. Its high current capability and low on-resistance enable it to provide stable performance in load switching, suitable for power protection circuits and current management systems.
4. **Inverter and high-power power module**: F1010EZS-VB is also suitable for the design of inverter and high-power power module. Its high voltage and high current capabilities can meet the inverter's requirements for high current and high efficiency during the conversion process, thereby improving the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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