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F1010EZL-VB TO262F Product details
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Product Introduction
**F1010EZL-VB** is a high-performance N-Channel MOSFET in a TO262 package with excellent electrical performance and reliability. This MOSFET uses Trench technology and is designed to handle high current and high voltage applications. Its rated drain-source voltage is 60V and its gate-source voltage is ±20V, providing stable switching performance and high efficiency. Its threshold voltage is 3.5V, ensuring that it can be turned on at a moderate gate voltage. The on-resistance (RDS(ON)) is 3mΩ at VGS=10V, with extremely low on-resistance and a maximum drain current of up to 210A, making it suitable for high-power and high-efficiency electronic designs.
**F1010EZL-VB** is a high-performance N-Channel MOSFET in a TO262 package with excellent electrical performance and reliability. This MOSFET uses Trench technology and is designed to handle high current and high voltage applications. Its rated drain-source voltage is 60V and its gate-source voltage is ±20V, providing stable switching performance and high efficiency. Its threshold voltage is 3.5V, ensuring that it can be turned on at a moderate gate voltage. The on-resistance (RDS(ON)) is 3mΩ at VGS=10V, with extremely low on-resistance and a maximum drain current of up to 210A, making it suitable for high-power and high-efficiency electronic designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: F1010EZL-VB
- **Package**: TO262
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 3mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 210A
- **Technology**: Trench
- **Model**: F1010EZL-VB
- **Package**: TO262
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 3mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
**F1010EZL-VB**'s excellent performance makes it widely used in high-power and high-efficiency electronic devices. Here are a few specific application examples:
1. **Power management system**: In the power management system, the low on-resistance and high current carrying capacity of F1010EZL-VB enable it to efficiently switch large currents, suitable for efficient DC-DC converters and power conversion modules, ensuring the efficiency and stability of the power system.
2. **Electric vehicles**: In the battery management system and drive control circuit of electric vehicles, this MOSFET can effectively handle high current requirements, provide reliable switching control, and improve the overall performance and endurance of electric vehicles.
3. **Industrial power supply**: In the industrial power supply system, the high current capability and low on-resistance of F1010EZL-VB help reduce energy loss and improve the efficiency of the system, and is suitable for switching and controlling high-power power supplies.
4. **High-power switching circuit**: In high-power switching circuits, such as high-power amplifiers and motor drive circuits, the MOSFET's high current carrying capacity and low RDS(ON) value can ensure efficient current switching and low heat generation, improving the performance and reliability of the equipment.
5. **UPS (Uninterruptible Power Supply)**: In an uninterruptible power supply system, the F1010EZL-VB can be used for efficient switching and conversion, ensuring reliable backup power when power is interrupted, protecting the operating stability of key equipment.
**F1010EZL-VB**'s excellent performance makes it widely used in high-power and high-efficiency electronic devices. Here are a few specific application examples:
1. **Power management system**: In the power management system, the low on-resistance and high current carrying capacity of F1010EZL-VB enable it to efficiently switch large currents, suitable for efficient DC-DC converters and power conversion modules, ensuring the efficiency and stability of the power system.
2. **Electric vehicles**: In the battery management system and drive control circuit of electric vehicles, this MOSFET can effectively handle high current requirements, provide reliable switching control, and improve the overall performance and endurance of electric vehicles.
3. **Industrial power supply**: In the industrial power supply system, the high current capability and low on-resistance of F1010EZL-VB help reduce energy loss and improve the efficiency of the system, and is suitable for switching and controlling high-power power supplies.
4. **High-power switching circuit**: In high-power switching circuits, such as high-power amplifiers and motor drive circuits, the MOSFET's high current carrying capacity and low RDS(ON) value can ensure efficient current switching and low heat generation, improving the performance and reliability of the equipment.
5. **UPS (Uninterruptible Power Supply)**: In an uninterruptible power supply system, the F1010EZL-VB can be used for efficient switching and conversion, ensuring reliable backup power when power is interrupted, protecting the operating stability of key equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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