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F1010ES-VB Product details
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F1010ES-VB MOSFET Product Introduction
**F1010ES-VB** is a high-performance unipolar N-type MOSFET in TO263 package. The device is designed for high current, high efficiency applications, with significantly low on-resistance and high withstand voltage characteristics. Its drain-source voltage (VDS) is 60V, suitable for medium voltage power supply and switching applications. The gate-source voltage (VGS) range of the MOSFET is ±20V, ensuring its reliable operation at higher voltages. The threshold voltage (Vth) is 1.7V, allowing the MOSFET to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 12mΩ (VGS = 4.5V) and 11mΩ (VGS = 10V), providing low-power switching performance. Its maximum drain current (ID) is 75A, suitable for handling high current loads. F1010ES-VB adopts Trench technology to provide better switching characteristics and current carrying capacity.
**F1010ES-VB** is a high-performance unipolar N-type MOSFET in TO263 package. The device is designed for high current, high efficiency applications, with significantly low on-resistance and high withstand voltage characteristics. Its drain-source voltage (VDS) is 60V, suitable for medium voltage power supply and switching applications. The gate-source voltage (VGS) range of the MOSFET is ±20V, ensuring its reliable operation at higher voltages. The threshold voltage (Vth) is 1.7V, allowing the MOSFET to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 12mΩ (VGS = 4.5V) and 11mΩ (VGS = 10V), providing low-power switching performance. Its maximum drain current (ID) is 75A, suitable for handling high current loads. F1010ES-VB adopts Trench technology to provide better switching characteristics and current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**1. Power management**: The low on-resistance and high current capability of the F1010ES-VB MOSFET make it ideal for power management applications such as DC-DC converters and switching power supplies. These features help reduce energy loss and improve conversion efficiency, especially in high current and medium voltage scenarios.
**2. Motor drive**: In motor control systems, such as DC motors or stepper motor drivers, the high current carrying capability and low RDS(ON) performance of the F1010ES-VB make it an ideal choice. It ensures stable and efficient operation of the motor while reducing power losses.
**3. Load switching**: The high current capability and low on-resistance of this MOSFET make it suitable for high-power load switching, such as high-power LED lighting systems or power switch modules. It can effectively control the load current and provide reliable switching functions.
**4. Battery Management System**: In the battery management system, the low RDS(ON) and high current handling capability of the F1010ES-VB help to efficiently manage the battery charge and discharge process. This helps to protect the battery from overcharge or overdischarge and prolong its service life.
Through these application examples, we can see the important role of the F1010ES-VB MOSFET in power management, motor drive, load switching and battery management. Its excellent performance makes it a key component in various high-efficiency electronic systems.
**1. Power management**: The low on-resistance and high current capability of the F1010ES-VB MOSFET make it ideal for power management applications such as DC-DC converters and switching power supplies. These features help reduce energy loss and improve conversion efficiency, especially in high current and medium voltage scenarios.
**2. Motor drive**: In motor control systems, such as DC motors or stepper motor drivers, the high current carrying capability and low RDS(ON) performance of the F1010ES-VB make it an ideal choice. It ensures stable and efficient operation of the motor while reducing power losses.
**3. Load switching**: The high current capability and low on-resistance of this MOSFET make it suitable for high-power load switching, such as high-power LED lighting systems or power switch modules. It can effectively control the load current and provide reliable switching functions.
**4. Battery Management System**: In the battery management system, the low RDS(ON) and high current handling capability of the F1010ES-VB help to efficiently manage the battery charge and discharge process. This helps to protect the battery from overcharge or overdischarge and prolong its service life.
Through these application examples, we can see the important role of the F1010ES-VB MOSFET in power management, motor drive, load switching and battery management. Its excellent performance makes it a key component in various high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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