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F1010EL-VB Product details
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Product Introduction
**F1010EL-VB** is a single N-channel MOSFET packaged in TO262. The device is manufactured with Trench technology and has extremely low on-resistance (RDS(ON)) and high current handling capability. Its maximum drain-source voltage (VDS) is 60V and the gate-source voltage (VGS) range is ±20V, which is suitable for applications requiring efficient switching and low power loss. The threshold voltage (Vth) of the MOSFET is 2.5V, and when VGS = 10V, the on-resistance (RDS(ON)) is 6mΩ and the maximum drain current (ID) is 120A. The F1010EL-VB is suitable for a variety of high-current, high-efficiency applications.
**F1010EL-VB** is a single N-channel MOSFET packaged in TO262. The device is manufactured with Trench technology and has extremely low on-resistance (RDS(ON)) and high current handling capability. Its maximum drain-source voltage (VDS) is 60V and the gate-source voltage (VGS) range is ±20V, which is suitable for applications requiring efficient switching and low power loss. The threshold voltage (Vth) of the MOSFET is 2.5V, and when VGS = 10V, the on-resistance (RDS(ON)) is 6mΩ and the maximum drain current (ID) is 120A. The F1010EL-VB is suitable for a variety of high-current, high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: F1010EL-VB
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: F1010EL-VB
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **High-Efficiency Power Supplies**:
The low on-resistance and high current carrying capability of the F1010EL-VB make it ideal for use in high-efficiency switching power supplies. This helps reduce energy loss and improve overall system efficiency, especially in applications that require high current and high efficiency, such as server power supplies and industrial power supplies.
2. **Motor Drives**:
In motor drive applications, this MOSFET can be used as a switching element in motor control circuits. Its high current handling capability and low RDS(ON) can effectively control the drive current of the motor and improve the performance and stability of the motor drive system.
3. **DC-DC Converters**:
Due to its low on-resistance and high current handling capability, the F1010EL-VB is suitable for DC-DC converters, especially in applications that require high efficiency and high power output, such as communication equipment and battery management systems.
4. **Power Amplifiers**:
In power amplifiers, the high current and low on-resistance characteristics of this MOSFET enable it to provide stable performance in high power amplification applications, especially suitable for audio amplifiers and RF power amplifiers.
5. **Automotive Electronics**:
Due to its high withstand voltage and high current capability, the F1010EL-VB is suitable for high current switching applications in automotive electronic systems, such as battery management systems and power system control for electric vehicles.
These applications take full advantage of the low on-resistance and high current handling capabilities of the F1010EL-VB to achieve efficient current control and system optimization.
1. **High-Efficiency Power Supplies**:
The low on-resistance and high current carrying capability of the F1010EL-VB make it ideal for use in high-efficiency switching power supplies. This helps reduce energy loss and improve overall system efficiency, especially in applications that require high current and high efficiency, such as server power supplies and industrial power supplies.
2. **Motor Drives**:
In motor drive applications, this MOSFET can be used as a switching element in motor control circuits. Its high current handling capability and low RDS(ON) can effectively control the drive current of the motor and improve the performance and stability of the motor drive system.
3. **DC-DC Converters**:
Due to its low on-resistance and high current handling capability, the F1010EL-VB is suitable for DC-DC converters, especially in applications that require high efficiency and high power output, such as communication equipment and battery management systems.
4. **Power Amplifiers**:
In power amplifiers, the high current and low on-resistance characteristics of this MOSFET enable it to provide stable performance in high power amplification applications, especially suitable for audio amplifiers and RF power amplifiers.
5. **Automotive Electronics**:
Due to its high withstand voltage and high current capability, the F1010EL-VB is suitable for high current switching applications in automotive electronic systems, such as battery management systems and power system control for electric vehicles.
These applications take full advantage of the low on-resistance and high current handling capabilities of the F1010EL-VB to achieve efficient current control and system optimization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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