Featured Model

Your present location > Home page > Featured Model

EMH1307-VB Product details

Product introduction:

Product Introduction

**EMH1307-VB** is a high-performance P-Channel MOSFET packaged in a compact SC70-8 package. This MOSFET uses Trench technology and has low on-resistance and excellent switching characteristics. Its rated drain-source voltage is -20V, which is suitable for miniaturized electronic devices and high-density applications. It has a low threshold voltage (Vth) of -0.8V, which enables it to be effectively turned on at a lower gate voltage. Its on-resistance RDS(ON) is 24mΩ at VGS=4.5V and 20mΩ at VGS=10V, supporting a maximum drain current of -6.5A, suitable for a variety of power switching applications.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-8 Single-P -20V -0.8V -6.5A 20mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-8 Single-P -20V -0.8V -6.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-8 Single-P -20V -0.8V -6.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-8 Single-P
Detailed parameter description

- **Model**: EMH1307-VB
- **Package**: SC70-8
- **Configuration**: Unipolar P-Channel
- **Drain-Source Voltage (VDS)**: -20V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -0.8V
- **On-Resistance (RDS(ON))**:
- 24mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -6.5A
- **Technology**: Trench

Domain and module applications:

Applications and Module Examples

The excellent performance of the EMH1307-VB makes it suitable for a variety of electronic applications, especially in space-constrained environments. Here are a few specific application examples:

1. Portable Electronic Devices: Due to its compact SC70-8 package, the EMH1307-VB is ideal for use in portable devices such as smartphones, tablets, and portable audio systems as an efficient switching element to control power and signal flow.

2. Battery Management Systems: In battery management systems, the low threshold voltage and low on-resistance of this MOSFET help to efficiently switch and manage the battery charging and discharging process, ensuring safe and efficient operation of the battery.

3. Low-Power Switching Circuits: In low-power switching circuits, such as LED drive circuits and small motor control circuits, the low RDS(ON) and high maximum drain current of the EMH1307-VB enable it to efficiently control current while reducing energy loss.

4. **High-density PCB**: In high-density PCB design, the small package of this MOSFET can help save board space while providing efficient switching performance, suitable for application in compact electronic modules.

5. **Low-voltage power management**: In low-voltage power management modules, such as buck converters and regulators, the low on-resistance of the EMH1307-VB ensures high efficiency and low heat operation, suitable for applications with strict power loss requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat