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EMF24N02Q-VB Product details
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Product Introduction
**EMF24N02Q-VB** is a high-performance N-Channel MOSFET in a SOT223 package. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 1.7V, allowing it to be turned on at a lower gate voltage. EMF24N02Q-VB uses Trench technology to optimize its on-resistance and switching characteristics. When VGS is 4.5V, the on-resistance (RDS(ON)) is 21mΩ, and when VGS is 10V, RDS(ON) is 19mΩ. Its maximum drain current (ID) is 7A. The design of EMF24N02Q-VB enables it to excel in applications that require efficient switching and low power consumption.
**EMF24N02Q-VB** is a high-performance N-Channel MOSFET in a SOT223 package. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 1.7V, allowing it to be turned on at a lower gate voltage. EMF24N02Q-VB uses Trench technology to optimize its on-resistance and switching characteristics. When VGS is 4.5V, the on-resistance (RDS(ON)) is 21mΩ, and when VGS is 10V, RDS(ON) is 19mΩ. Its maximum drain current (ID) is 7A. The design of EMF24N02Q-VB enables it to excel in applications that require efficient switching and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: EMF24N02Q-VB
- **Package**: SOT223
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- @ VGS = 4.5V: 21mΩ
- @ VGS = 10V: 19mΩ
- **Maximum drain current (ID)**: 7A
- **Technology**: Trench
- **Model**: EMF24N02Q-VB
- **Package**: SOT223
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- @ VGS = 4.5V: 21mΩ
- @ VGS = 10V: 19mΩ
- **Maximum drain current (ID)**: 7A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
**EMF24N02Q-VB**'s excellent performance makes it suitable for multiple fields and modules:
1. **Switching power supply**: In the switching power supply design, the low RDS(ON) and high drain current capability of EMF24N02Q-VB enable it to perform switching operations efficiently, reduce energy loss, and improve power efficiency.
2. **Load switch**: Due to its low on-resistance, EMF24N02Q-VB is very suitable for use as a load switch, which can effectively control the flow of current and is suitable for switching control of various high current loads.
3. **DC-DC converter**: In the DC-DC converter, EMF24N02Q-VB can be used as an efficient switching element to provide stable voltage conversion and optimize system performance.
4. **Battery Management System**: The low power consumption of this MOSFET makes it an excellent choice for battery management systems for battery protection and charging control, ensuring system stability and long life.
5. **Automotive Electronics**: In automotive electronics, such as motor drive and power distribution systems, the high current carrying capability and low on-resistance of the EMF24N02Q-VB are key performance advantages that can meet the stringent automotive environment requirements.
The high switching performance and low power consumption of the EMF24N02Q-VB make it an ideal choice for a variety of high-efficiency power management and switching applications.
**EMF24N02Q-VB**'s excellent performance makes it suitable for multiple fields and modules:
1. **Switching power supply**: In the switching power supply design, the low RDS(ON) and high drain current capability of EMF24N02Q-VB enable it to perform switching operations efficiently, reduce energy loss, and improve power efficiency.
2. **Load switch**: Due to its low on-resistance, EMF24N02Q-VB is very suitable for use as a load switch, which can effectively control the flow of current and is suitable for switching control of various high current loads.
3. **DC-DC converter**: In the DC-DC converter, EMF24N02Q-VB can be used as an efficient switching element to provide stable voltage conversion and optimize system performance.
4. **Battery Management System**: The low power consumption of this MOSFET makes it an excellent choice for battery management systems for battery protection and charging control, ensuring system stability and long life.
5. **Automotive Electronics**: In automotive electronics, such as motor drive and power distribution systems, the high current carrying capability and low on-resistance of the EMF24N02Q-VB are key performance advantages that can meet the stringent automotive environment requirements.
The high switching performance and low power consumption of the EMF24N02Q-VB make it an ideal choice for a variety of high-efficiency power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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