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EMD50N10A-VB Product details
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EMD50N10A-VB MOSFET Product Introduction
**EMD50N10A-VB** is a high-performance unipolar N-type MOSFET in a TO252 package, designed for applications requiring high voltage and high current capabilities. The device has a drain-source voltage (VDS) of 100V, making it suitable for high voltage applications. The gate-source voltage (VGS) range of the MOSFET is ±20V, making it highly tolerant. Its threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 18mΩ (VGS = 10V), providing excellent conduction performance and effectively reducing power losses. The maximum drain current (ID) is 45A, making it suitable for handling high current applications. EMD50N10A-VB uses Trench technology, with good switching performance and high current carrying capacity.
**EMD50N10A-VB** is a high-performance unipolar N-type MOSFET in a TO252 package, designed for applications requiring high voltage and high current capabilities. The device has a drain-source voltage (VDS) of 100V, making it suitable for high voltage applications. The gate-source voltage (VGS) range of the MOSFET is ±20V, making it highly tolerant. Its threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 18mΩ (VGS = 10V), providing excellent conduction performance and effectively reducing power losses. The maximum drain current (ID) is 45A, making it suitable for handling high current applications. EMD50N10A-VB uses Trench technology, with good switching performance and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**1. Power conversion**: The high withstand voltage and low on-resistance of the EMD50N10A-VB MOSFET make it ideal for power converters such as DC-DC converters and switching power supplies. These features help reduce energy loss and improve conversion efficiency, especially in high-voltage applications.
**2. Motor control**: In motor control modules, the high current carrying capacity and excellent switching performance of this MOSFET make it an ideal choice for motor drive systems, such as DC motor drivers or stepper motor controllers. It ensures stable operation and high efficiency of the motor.
**3. Load switching**: Due to its high withstand voltage and low RDS(ON), the EMD50N10A-VB is suitable for high-current load switching, such as high-power LED lighting or power switch modules. It can effectively control the current flow and protect the circuit from overload or short circuit.
**4. Battery Management**: In the battery management system, the high current capability and low on-resistance of this MOSFET ensure the effective management of the battery, prevent overcharging or over-discharging, extend battery life and improve system reliability.
Through these application examples, it can be seen that the EMD50N10A-VB MOSFET performs well in high-voltage and high-current application scenarios. Its excellent performance makes it play an important role in power management, load switching and motor control.
**1. Power conversion**: The high withstand voltage and low on-resistance of the EMD50N10A-VB MOSFET make it ideal for power converters such as DC-DC converters and switching power supplies. These features help reduce energy loss and improve conversion efficiency, especially in high-voltage applications.
**2. Motor control**: In motor control modules, the high current carrying capacity and excellent switching performance of this MOSFET make it an ideal choice for motor drive systems, such as DC motor drivers or stepper motor controllers. It ensures stable operation and high efficiency of the motor.
**3. Load switching**: Due to its high withstand voltage and low RDS(ON), the EMD50N10A-VB is suitable for high-current load switching, such as high-power LED lighting or power switch modules. It can effectively control the current flow and protect the circuit from overload or short circuit.
**4. Battery Management**: In the battery management system, the high current capability and low on-resistance of this MOSFET ensure the effective management of the battery, prevent overcharging or over-discharging, extend battery life and improve system reliability.
Through these application examples, it can be seen that the EMD50N10A-VB MOSFET performs well in high-voltage and high-current application scenarios. Its excellent performance makes it play an important role in power management, load switching and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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