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EMB50N10A-VB Product details
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EMB50N10A-VB MOSFET Product Introduction
EMB50N10A-VB is a single N-channel MOSFET in TO252 package, designed for high voltage and high current power management applications. Its drain-source voltage (VDS) is as high as 100V, enabling it to operate stably in a high voltage environment. The device is equipped with Trench technology to provide low on-resistance (RDS(ON)), enabling efficient switching and power control. It has a high maximum continuous drain current (ID) of 45A, suitable for power supplies and drive systems requiring high current.
EMB50N10A-VB is a single N-channel MOSFET in TO252 package, designed for high voltage and high current power management applications. Its drain-source voltage (VDS) is as high as 100V, enabling it to operate stably in a high voltage environment. The device is equipped with Trench technology to provide low on-resistance (RDS(ON)), enabling efficient switching and power control. It has a high maximum continuous drain current (ID) of 45A, suitable for power supplies and drive systems requiring high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
EMB50N10A-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Application fields and modules of EMB50N10A-VB
EMB50N10A-VB MOSFET has a wide range of applications in multiple fields and modules:
1. **Power supply and management**: Due to its high withstand voltage and low on-resistance, EMB50N10A-VB is suitable for use in power converters, power switches, and power management systems to provide stable power output and efficient power control.
2. **Motor driver**: In motor drive circuits, EMB50N10A-VB is capable of handling large currents and is suitable for applications that require high current switching, such as drivers for stepper motors or brushless DC motors, to ensure smooth operation of the motor.
3. **Battery management system**: This MOSFET is suitable for power switches in battery management systems, providing efficient and stable switching performance during battery charging and discharging.
4. **High-power LED driver**: In high-power LED driver circuits, EMB50N10A-VB can effectively control the LED current, provide efficient light source driving, and reduce power consumption and heat.
Through these application examples, it can be seen that EMB50N10A-VB MOSFET is widely used in power supplies and power management systems that require high efficiency and stability due to its high voltage and high current capabilities, and is suitable for various high-power and high-current electronic applications.
EMB50N10A-VB MOSFET has a wide range of applications in multiple fields and modules:
1. **Power supply and management**: Due to its high withstand voltage and low on-resistance, EMB50N10A-VB is suitable for use in power converters, power switches, and power management systems to provide stable power output and efficient power control.
2. **Motor driver**: In motor drive circuits, EMB50N10A-VB is capable of handling large currents and is suitable for applications that require high current switching, such as drivers for stepper motors or brushless DC motors, to ensure smooth operation of the motor.
3. **Battery management system**: This MOSFET is suitable for power switches in battery management systems, providing efficient and stable switching performance during battery charging and discharging.
4. **High-power LED driver**: In high-power LED driver circuits, EMB50N10A-VB can effectively control the LED current, provide efficient light source driving, and reduce power consumption and heat.
Through these application examples, it can be seen that EMB50N10A-VB MOSFET is widely used in power supplies and power management systems that require high efficiency and stability due to its high voltage and high current capabilities, and is suitable for various high-power and high-current electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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