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EMB39P06A-VB Product details
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Product Introduction
**EMB39P06A-VB** is a high-performance P-Channel MOSFET in TO252 package. This MOSFET uses Trench technology, has excellent switching performance and low on-resistance, and is suitable for various high-power applications. Its rated drain-source voltage is -60V, and it has a maximum drain current of -50A. The threshold voltage (Vth) of this MOSFET is -1.7V, which allows it to be turned on at a lower gate voltage. Its on-resistance RDS(ON) is 25mΩ at VGS=4.5V and 20mΩ at VGS=10V, ensuring low energy consumption and high-efficiency working performance.
**EMB39P06A-VB** is a high-performance P-Channel MOSFET in TO252 package. This MOSFET uses Trench technology, has excellent switching performance and low on-resistance, and is suitable for various high-power applications. Its rated drain-source voltage is -60V, and it has a maximum drain current of -50A. The threshold voltage (Vth) of this MOSFET is -1.7V, which allows it to be turned on at a lower gate voltage. Its on-resistance RDS(ON) is 25mΩ at VGS=4.5V and 20mΩ at VGS=10V, ensuring low energy consumption and high-efficiency working performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: EMB39P06A-VB
- **Package**: TO252
- **Configuration**: Unipolar P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -50A
- **Technology**: Trench
- **Model**: EMB39P06A-VB
- **Package**: TO252
- **Configuration**: Unipolar P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -50A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
**EMB39P06A-VB** is very suitable for the following fields and modules due to its excellent electrical characteristics:
1. **Power management module**: In power conversion and voltage regulation modules, the low on-resistance of EMB39P06A-VB can effectively reduce power loss and heat generation, making the power management system more efficient and stable.
2. **Electric vehicle**: In the battery management system of electric vehicles, this MOSFET can be used for battery switching and power regulation to ensure safe and efficient operation of the battery.
3. **Switching power supply**: In switching power supplies, the high current carrying capacity and low on-resistance of EMB39P06A-VB help improve overall efficiency and reduce energy loss in the power supply.
4. **DC-DC converter**: In DC-DC converters, the low RDS(ON) value of MOSFET helps improve conversion efficiency and reduce heat generation, thereby improving the overall performance of the system.
5. **Power Amplifier**: In audio power amplifiers, this MOSFET can be used for efficient switch control to improve amplifier efficiency and output quality.
These application examples demonstrate the wide applicability of EMB39P06A-VB and its outstanding performance in high-power, high-efficiency scenarios.
**EMB39P06A-VB** is very suitable for the following fields and modules due to its excellent electrical characteristics:
1. **Power management module**: In power conversion and voltage regulation modules, the low on-resistance of EMB39P06A-VB can effectively reduce power loss and heat generation, making the power management system more efficient and stable.
2. **Electric vehicle**: In the battery management system of electric vehicles, this MOSFET can be used for battery switching and power regulation to ensure safe and efficient operation of the battery.
3. **Switching power supply**: In switching power supplies, the high current carrying capacity and low on-resistance of EMB39P06A-VB help improve overall efficiency and reduce energy loss in the power supply.
4. **DC-DC converter**: In DC-DC converters, the low RDS(ON) value of MOSFET helps improve conversion efficiency and reduce heat generation, thereby improving the overall performance of the system.
5. **Power Amplifier**: In audio power amplifiers, this MOSFET can be used for efficient switch control to improve amplifier efficiency and output quality.
These application examples demonstrate the wide applicability of EMB39P06A-VB and its outstanding performance in high-power, high-efficiency scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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