Product introduction：
Product Introduction
**EMB20P03G-VB** is a high-performance P-Channel MOSFET in SOP8 package. The MOSFET is configured as a single P-Channel structure with a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is -3V, which enables it to be turned on at a low gate voltage, making it suitable for a variety of low-voltage switching applications. The device uses Trench technology and has excellent on-resistance (RDS(ON)) and current carrying capacity. Specifically, when VGS is 4.5V, RDS(ON) is 8mΩ, when VGS is 10V, RDS(ON) is 5mΩ, and the maximum drain current (ID) is -18A. This makes the EMB20P03G-VB particularly suitable for high-efficiency switching power supplies and load drive circuits.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-3V |
-18A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-3V |
-18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-3V |
-18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: EMB20P03G-VB
- **Package**: SOP8
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON)）**:
- @ VGS = 4.5V: 8mΩ
- @ VGS = 10V: 5mΩ
- **Maximum drain current (ID)**: -18A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
**EMB20P03G-VB** Due to its superior electrical performance, it is widely used in multiple fields and modules:
1. **Switching power supply**: Due to its low RDS(ON) and high current carrying capacity, EMB20P03G-VB can significantly reduce power loss and improve conversion efficiency as an efficient switching element in the switching power supply module.
2. **Load switch**: In load switch applications, this MOSFET can provide low on-resistance and high current capability, which is very suitable for switching high-power loads such as motor drives, LED drives and various power management modules.
3. **Battery protection circuit**: Its low RDS(ON) characteristics make it an ideal choice for battery protection circuits, which can effectively reduce the power consumption in the battery protection switch and enhance the overall efficiency of the system.
4. **DC-DC Converter**: In DC-DC converters, EMB20P03G-VB can be used as a high-side switch to control current flow and ensure efficient power conversion.
5. **Automotive Electronics**: In automotive electronic systems, such as power management systems and on-board battery management systems, the high current capability and low on-resistance of this MOSFET enable it to meet stringent performance requirements and environmental conditions.
The design of EMB20P03G-VB enables it to excel in application scenarios that require high current and low power consumption, making it an ideal choice for a variety of high-efficiency power and switch designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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