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EMB09P03A-VB Product details
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Product Introduction
**Model: EMB09P03A-VB**
**Package: TO252**
**Configuration: Unipolar P-channel MOSFET**
**VDS: -30V**
**VGS: ±20V**
**Vth: -2.5V**
**RDS(ON) @ VGS=4.5V: 11mΩ**
**RDS(ON) @ VGS=10V: 9mΩ**
**ID: -60A**
**Technology: Trench Technology**
EMB09P03A-VB is a high performance P-channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. Its low RDS(ON) characteristics ensure lower power losses during switching operation, thus improving overall system efficiency. This MOSFET is suitable for applications such as power management, motor drive, and switching circuits that require negative voltage operation.
**Model: EMB09P03A-VB**
**Package: TO252**
**Configuration: Unipolar P-channel MOSFET**
**VDS: -30V**
**VGS: ±20V**
**Vth: -2.5V**
**RDS(ON) @ VGS=4.5V: 11mΩ**
**RDS(ON) @ VGS=10V: 9mΩ**
**ID: -60A**
**Technology: Trench Technology**
EMB09P03A-VB is a high performance P-channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. Its low RDS(ON) characteristics ensure lower power losses during switching operation, thus improving overall system efficiency. This MOSFET is suitable for applications such as power management, motor drive, and switching circuits that require negative voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package: ** TO252
- **Configuration: ** Unipolar P channel
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -2.5V
- **On-resistance (RDS(ON)): **
- @ VGS=4.5V: 11mΩ
- @ VGS=10V: 9mΩ
- **Drain current (ID): ** -60A
- **Technology: ** Trench technology
- **Package: ** TO252
- **Configuration: ** Unipolar P channel
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -2.5V
- **On-resistance (RDS(ON)): **
- @ VGS=4.5V: 11mΩ
- @ VGS=10V: 9mΩ
- **Drain current (ID): ** -60A
- **Technology: ** Trench technology
Domain and module applications：
Applications and modules
1. **Power management:** EMB09P03A-VB is very suitable for use as a switching element in power management systems due to its low on-resistance. For example, in high-efficiency power conversion modules, the use of this MOSFET can effectively reduce power loss and improve conversion efficiency, thereby extending the service life of the equipment.
2. **Motor drive:** In motor drive circuits, P-channel MOSFETs are often used to achieve efficient switching control. The high current carrying capacity of EMB09P03A-VB enables it to handle large current loads and is suitable for positive and negative direction control and speed regulation applications of motors.
3. **Switching circuit:** This MOSFET is suitable for a variety of switching circuit applications, such as LED driving, battery management systems, etc. Its high switching speed and low RDS(ON) characteristics help reduce power loss during switching and improve overall system efficiency.
4. **Inverter application:** In inverter modules, the high current and low on-resistance characteristics of EMB09P03A-VB make it an ideal choice. It can work stably under high voltage and high current conditions to ensure efficient operation of the inverter.
Through these applications, EMB09P03A-VB can effectively support a variety of electronic devices that require high-performance switch control.
1. **Power management:** EMB09P03A-VB is very suitable for use as a switching element in power management systems due to its low on-resistance. For example, in high-efficiency power conversion modules, the use of this MOSFET can effectively reduce power loss and improve conversion efficiency, thereby extending the service life of the equipment.
2. **Motor drive:** In motor drive circuits, P-channel MOSFETs are often used to achieve efficient switching control. The high current carrying capacity of EMB09P03A-VB enables it to handle large current loads and is suitable for positive and negative direction control and speed regulation applications of motors.
3. **Switching circuit:** This MOSFET is suitable for a variety of switching circuit applications, such as LED driving, battery management systems, etc. Its high switching speed and low RDS(ON) characteristics help reduce power loss during switching and improve overall system efficiency.
4. **Inverter application:** In inverter modules, the high current and low on-resistance characteristics of EMB09P03A-VB make it an ideal choice. It can work stably under high voltage and high current conditions to ensure efficient operation of the inverter.
Through these applications, EMB09P03A-VB can effectively support a variety of electronic devices that require high-performance switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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