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EMB09N03G-VB Product details

Product introduction:

EMB09N03G-VB MOSFET Product Introduction

**EMB09N03G-VB** is a high-performance N-Channel MOSFET in SOP8 package. It performs well at a drain-source voltage (V_DS) of 30V, with excellent switching performance and low on-resistance. This MOSFET uses Trench technology, has low on-resistance and high current carrying capacity, and is suitable for a variety of high-efficiency circuits and switching applications. This MOSFET has different on-resistances at gate-source voltages of 4.5V and 10V, making it suitable for applications under a variety of voltage conditions. Its threshold voltage (V_th) is 1.7V, enabling it to operate effectively at lower gate voltages.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 11mΩ @ V_GS = 4.5V
- 8mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 13A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Power management**: EMB09N03G-VB MOSFET is widely used in power conversion modules, especially in DC-DC converters. Its low on-resistance and high current carrying capacity enable it to effectively reduce power loss and improve system efficiency. For example, in a switching power supply, it can be used as the main switching element to help achieve efficient power conversion.

2. **Motor drive**: In motor drive circuits, EMB09N03G-VB is able to provide smooth switching control due to its high current handling capability and low on-resistance. This makes it suitable for various motor drive modules, such as the drive circuit of a brushless DC motor (BLDC), helping to improve the operating efficiency and stability of the motor.

3. **LED drive**: In LED lighting systems, this MOSFET can be used as a switching element in the drive circuit. Due to its low on-resistance and excellent switching characteristics, it can effectively control the switching state of the LED, ensuring the stability and long life of the LED lamps.

4. **Automotive electronics**: In automotive electronics applications, EMB09N03G-VB can be used in automotive power management modules, such as automotive start-up circuits, charging systems, etc. Its high current carrying capacity and durability are suitable for use in high temperature and high load environments, providing reliable performance.

These application examples demonstrate the wide applicability of EMB09N03G-VB in various electronic circuits with high performance and high reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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