EMB03N03A-VB Product details
Product introduction:
EMB03N03A-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for high current, low on-resistance applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, the device is able to maintain stable performance in harsh electrical environments. Its turn-on voltage (Vth) is 1.7V, and it uses advanced Trench process technology to achieve extremely low on-resistance, 3mΩ@VGS=4.5V and 2mΩ@VGS=10V, respectively, supporting a continuous drain current (ID) of up to 120A. These features enable the EMB03N03A-VB to excel in applications that require high current handling capabilities and efficient switching.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: EMB03N03A-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications:
The design features of EMB03N03A-VB make it suitable for a variety of high-performance applications:
1. **Power management and switching power supply**: EMB03N03A-VB performs well in high-efficiency power management modules, such as DC-DC converters and regulators. Its low on-resistance and high current capability help improve conversion efficiency and reduce heat loss, and is suitable for applications that require low-voltage and high-current output, such as server power supplies and telecommunications equipment.
2. **Motor control and drive**: In motor drive applications, the high current handling capability of EMB03N03A-VB makes it very suitable for motor control circuits that require precise control and high efficiency, such as motor control modules in electric vehicles. This MOSFET can effectively reduce current loss and improve the overall efficiency of the motor.
3. **Load Switch and Protection Circuit**: Due to its excellent on-resistance and current handling capability, the EMB03N03A-VB is commonly used in load switch applications, such as switching power supply protection in consumer electronic devices and overcurrent protection circuits for high-power devices. Its low loss characteristics can extend device life and improve system reliability.
4. **Power Distribution and Battery Management System**: The EMB03N03A-VB is suitable for power distribution and protection circuits in battery management systems (BMS). Its high current capability and low on-resistance play an important role in the charge and discharge control of battery packs, especially in electric vehicles and energy storage systems, which can improve the power density and operating efficiency of the system.
Technical support:
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