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EM6K31N-VB Product details

Product introduction:

EM6K31N-VB MOSFET Product Introduction

The EM6K31N-VB is a dual N-channel MOSFET in an SC75-6 package. Designed for low voltage and low power applications, this MOSFET has a drain-source voltage (VDS) of 60V and a gate voltage (VGS) operating range of ±20V. By using Trench technology, the EM6K31N-VB achieves a lower on-resistance, with an on-resistance of 1500mΩ and 1200mΩ at a gate voltage of 4.5V and 10V, respectively. Its maximum drain current (ID) is 0.3A. This MOSFET is suitable for space-constrained applications and provides stable switching performance and reliable current handling capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC75-6 Dual-N+N 60V 1.7V 0.3A 1200mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC75-6 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC75-6 Dual-N+N 60V 1.7V 0.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC75-6 Dual-N+N 60V 1.7V 0.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC75-6 Dual-N+N
Detailed parameter description

- **Package type**: SC75-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1500mΩ @ VGS = 4.5V
- 1200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench

Domain and module applications:

Applications and Modules

The dual N-channel configuration and small package of the EM6K31N-VB make it suitable for several specific application areas:

1. **Low-power switch**: Due to its low on-resistance and low-power handling capability, the EM6K31N-VB is well suited for low-power switching applications. For example, in the power management circuits of consumer electronics, this MOSFET can effectively switch low-current loads while maintaining low power consumption.

2. **Portable electronic devices**: Due to its compact SC75-6 package, the EM6K31N-VB is particularly suitable for space-constrained portable devices such as smartphones and tablets. It can be used in power switches, battery protection, and other low-power circuits to improve the performance and efficiency of the device.

3. **Motor driver**: In some small motor drive applications, the EM6K31N-VB can be used as part of a motor control switch or driver. Although its drain current is small, it still provides sufficient switching performance in low-power motor applications.

4. **Overcurrent protection**: This MOSFET can also be used in overcurrent protection circuits to prevent overload conditions by controlling the load current and protect the safety of the entire circuit system. It is suitable for applications with low current protection requirements.

With its compact package and moderate performance parameters, the EM6K31N-VB provides a reliable solution for low-power and space-constrained applications, especially for power management and switching functions in consumer electronics and portable devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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