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ELM36802EA-S-VB Product details
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Product Introduction
**ELM36802EA-S-VB** is a high-performance dual N-channel MOSFET in SOT23-6 package. This MOSFET is designed to operate at a drain-source voltage (VDS) of 20V, and is particularly suitable for applications that require efficient switching and low power consumption. Its threshold voltage (Vth) ranges from 0.5 to 1.5V, enabling good conduction at a lower gate-source voltage (VGS). ELM36802EA-S-VB uses Trench technology, which provides excellent conduction performance and switching speed, and is suitable for use in a variety of electronic devices that require high current and low on-resistance.
**ELM36802EA-S-VB** is a high-performance dual N-channel MOSFET in SOT23-6 package. This MOSFET is designed to operate at a drain-source voltage (VDS) of 20V, and is particularly suitable for applications that require efficient switching and low power consumption. Its threshold voltage (Vth) ranges from 0.5 to 1.5V, enabling good conduction at a lower gate-source voltage (VGS). ELM36802EA-S-VB uses Trench technology, which provides excellent conduction performance and switching speed, and is suitable for use in a variety of electronic devices that require high current and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Package type**: SOT23-6
- **Device configuration**: Dual N-channel (N+N-Channel)
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology (trench gate technology)
- **Package type**: SOT23-6
- **Device configuration**: Dual N-channel (N+N-Channel)
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench technology (trench gate technology)
Domain and module applications：
Applications and Modules
**ELM36802EA-S-VB** MOSFETs are widely used in a variety of applications and modules, especially in scenarios that require efficient switching and high current handling:
1. **Power Management Systems**: Due to its low on-resistance and high current handling capability, the ELM36802EA-S-VB is ideal for power management systems such as DC-DC converters, regulators, and power switches. These applications require MOSFETs to efficiently switch and control current to provide a stable power supply.
2. **High Power Switch**: In applications that require high power switching, such as motor drives and power amplifiers, the ELM36802EA-S-VB can effectively handle high currents and provide reliable switching performance, thereby enhancing the overall performance and stability of the system.
3. **Load Switch**: In various load switch applications, such as load switch modules and power switch controls, the low on-resistance of the ELM36802EA-S-VB can reduce power consumption and improve switching efficiency.
4. **Consumer Electronics Devices**: In consumer electronics, such as smartphones, tablets, and laptops, this MOSFET can be used as a switching element to help control power and signal paths, optimizing the performance and battery life of the device.
These applications demonstrate the advantages of the ELM36802EA-S-VB in efficient switching and current handling, making it an indispensable component in multiple electronic devices.
**ELM36802EA-S-VB** MOSFETs are widely used in a variety of applications and modules, especially in scenarios that require efficient switching and high current handling:
1. **Power Management Systems**: Due to its low on-resistance and high current handling capability, the ELM36802EA-S-VB is ideal for power management systems such as DC-DC converters, regulators, and power switches. These applications require MOSFETs to efficiently switch and control current to provide a stable power supply.
2. **High Power Switch**: In applications that require high power switching, such as motor drives and power amplifiers, the ELM36802EA-S-VB can effectively handle high currents and provide reliable switching performance, thereby enhancing the overall performance and stability of the system.
3. **Load Switch**: In various load switch applications, such as load switch modules and power switch controls, the low on-resistance of the ELM36802EA-S-VB can reduce power consumption and improve switching efficiency.
4. **Consumer Electronics Devices**: In consumer electronics, such as smartphones, tablets, and laptops, this MOSFET can be used as a switching element to help control power and signal paths, optimizing the performance and battery life of the device.
These applications demonstrate the advantages of the ELM36802EA-S-VB in efficient switching and current handling, making it an indispensable component in multiple electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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