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ELM36800EA-S-VB Product details
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Product Introduction
ELM36800EA-S-VB is a dual N-channel MOSFET in SOT23-6 package. Designed for low voltage and medium power applications, this MOSFET has a maximum drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. Its turn-on voltage range is between 0.5V and 1.5V, providing flexible switching control. ELM36800EA-S-VB uses Trench technology and has excellent on-resistance performance of 28mΩ (VGS=2.5V) and 22mΩ (VGS=4.5V). Its maximum drain current is 6A, which is suitable for applications requiring high switching efficiency and smaller packages.
ELM36800EA-S-VB is a dual N-channel MOSFET in SOT23-6 package. Designed for low voltage and medium power applications, this MOSFET has a maximum drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. Its turn-on voltage range is between 0.5V and 1.5V, providing flexible switching control. ELM36800EA-S-VB uses Trench technology and has excellent on-resistance performance of 28mΩ (VGS=2.5V) and 22mΩ (VGS=4.5V). Its maximum drain current is 6A, which is suitable for applications requiring high switching efficiency and smaller packages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Throughput voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology type**: Trench technology
- **Package type**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Throughput voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology type**: Trench technology
Domain and module applications：
Applications and Module Examples
The ELM36800EA-S-VB MOSFET is suitable for the following applications and modules due to its low voltage, low on-resistance and high current capability:
1. **Portable Electronics**: Suitable for power switching and power management circuits in portable devices such as smartphones and tablets. Its small package and high efficiency can optimize the power consumption management of the device.
2. **Power Management Circuit**: In DC-DC converters and power distribution systems, the ELM36800EA-S-VB can efficiently handle medium currents to ensure the stability and efficiency of power conversion.
3. **LED Driver**: In LED lighting applications, this MOSFET can be used as an efficient switching element to manage the switching and dimming functions of LEDs, provide stable light output and extend the service life of LEDs.
4. **Automotive Electronics**: Suitable for low-power electrical control systems in automobiles, such as on-board chargers, electric window controllers, etc. Its high switching efficiency and small package design fit the compact space of automotive electronic systems.
5. **Communication Equipment**: In communication equipment, such as routers and switches, the ELM36800EA-S-VB can be used for power management and signal switching, providing reliable performance and low power consumption.
Through these application examples, the ELM36800EA-S-VB demonstrates its wide applicability in low-voltage and medium-power applications, and is an efficient and reliable switching solution in modern electronic devices.
The ELM36800EA-S-VB MOSFET is suitable for the following applications and modules due to its low voltage, low on-resistance and high current capability:
1. **Portable Electronics**: Suitable for power switching and power management circuits in portable devices such as smartphones and tablets. Its small package and high efficiency can optimize the power consumption management of the device.
2. **Power Management Circuit**: In DC-DC converters and power distribution systems, the ELM36800EA-S-VB can efficiently handle medium currents to ensure the stability and efficiency of power conversion.
3. **LED Driver**: In LED lighting applications, this MOSFET can be used as an efficient switching element to manage the switching and dimming functions of LEDs, provide stable light output and extend the service life of LEDs.
4. **Automotive Electronics**: Suitable for low-power electrical control systems in automobiles, such as on-board chargers, electric window controllers, etc. Its high switching efficiency and small package design fit the compact space of automotive electronic systems.
5. **Communication Equipment**: In communication equipment, such as routers and switches, the ELM36800EA-S-VB can be used for power management and signal switching, providing reliable performance and low power consumption.
Through these application examples, the ELM36800EA-S-VB demonstrates its wide applicability in low-voltage and medium-power applications, and is an efficient and reliable switching solution in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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