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ELM36403EA-S-VB Product details
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Product Introduction
ELM36403EA-S-VB is a high-performance P-channel MOSFET in a compact SOT23-6 package. Designed to handle negative voltage applications, the MOSFET has a maximum drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) range of ±20V. The ELM36403EA-S-VB is manufactured using advanced trench technology, providing excellent conduction performance and reliability. Its threshold voltage (Vth) is -1.7V, allowing the device to start conducting at a lower gate voltage. The MOSFET has an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V, which drops to 49mΩ at VGS=10V, and a maximum drain current (ID) of -4.8A. The ELM36403EA-S-VB is suitable for a variety of negative voltage switching and control applications.
ELM36403EA-S-VB is a high-performance P-channel MOSFET in a compact SOT23-6 package. Designed to handle negative voltage applications, the MOSFET has a maximum drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) range of ±20V. The ELM36403EA-S-VB is manufactured using advanced trench technology, providing excellent conduction performance and reliability. Its threshold voltage (Vth) is -1.7V, allowing the device to start conducting at a lower gate voltage. The MOSFET has an on-resistance (RDS(ON)) of 54mΩ at VGS=4.5V, which drops to 49mΩ at VGS=10V, and a maximum drain current (ID) of -4.8A. The ELM36403EA-S-VB is suitable for a variety of negative voltage switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package**: SOT23-6
- Compact SOT23-6 package, suitable for space-constrained applications, providing good heat dissipation performance.
- **Configuration**: Single P-channel
- Single P-channel MOSFET configuration is suitable for circuit designs that require negative voltage control.
- **Drain-source voltage (VDS)**: -30V
- The maximum drain-source voltage is -30V, suitable for negative voltage switching applications.
- **Gate-source voltage (VGS)**: ±20V
- The gate-source voltage range is ±20V, ensuring the stability of the device under various driving conditions.
- **Threshold voltage (Vth)**: -1.7V
- The negative threshold voltage allows the device to turn on at a lower gate voltage, suitable for negative voltage logic control.
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- The lower on-resistance indicates that the device can provide low-loss current transfer at different gate voltages.
- **Maximum drain current (ID)**: -4.8A
- The maximum continuous drain current is -4.8A, suitable for handling medium current loads.
- **Technology**: Trench
- Trench technology optimizes on-resistance and switching performance, improving device efficiency and reliability.
- **Package**: SOT23-6
- Compact SOT23-6 package, suitable for space-constrained applications, providing good heat dissipation performance.
- **Configuration**: Single P-channel
- Single P-channel MOSFET configuration is suitable for circuit designs that require negative voltage control.
- **Drain-source voltage (VDS)**: -30V
- The maximum drain-source voltage is -30V, suitable for negative voltage switching applications.
- **Gate-source voltage (VGS)**: ±20V
- The gate-source voltage range is ±20V, ensuring the stability of the device under various driving conditions.
- **Threshold voltage (Vth)**: -1.7V
- The negative threshold voltage allows the device to turn on at a lower gate voltage, suitable for negative voltage logic control.
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- The lower on-resistance indicates that the device can provide low-loss current transfer at different gate voltages.
- **Maximum drain current (ID)**: -4.8A
- The maximum continuous drain current is -4.8A, suitable for handling medium current loads.
- **Technology**: Trench
- Trench technology optimizes on-resistance and switching performance, improving device efficiency and reliability.
Domain and module applications：
Applicable fields and modules
ELM36403EA-S-VB is mainly used in the following fields and modules:
1. **Power management**: In power management circuits, ELM36403EA-S-VB can be used for negative power switches, providing high-efficiency and low-conduction loss current control, especially suitable for efficient conversion and management of negative power.
2. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for negative voltage load switching and protection circuits, such as in vehicle battery management systems, to ensure the stability and reliability of negative current.
3. **Industrial control**: In industrial automation control systems, ELM36403EA-S-VB can be used to control negative voltage loads, such as solenoid valves and relays, to provide stable switching functions for the system.
4. **Consumer electronics**: In consumer electronic devices, this MOSFET can be used for negative power management and current switching, such as for small load control, to provide a reliable switching solution.
5. **Communication equipment**: In communication equipment, the ELM36403EA-S-VB is suitable for the switching and protection circuits of negative voltage power supplies, ensuring stable operation of the equipment under negative voltage.
Overall, the low on-resistance and excellent negative voltage handling capability of the ELM36403EA-S-VB make it an ideal choice for negative voltage switching and control applications.
ELM36403EA-S-VB is mainly used in the following fields and modules:
1. **Power management**: In power management circuits, ELM36403EA-S-VB can be used for negative power switches, providing high-efficiency and low-conduction loss current control, especially suitable for efficient conversion and management of negative power.
2. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for negative voltage load switching and protection circuits, such as in vehicle battery management systems, to ensure the stability and reliability of negative current.
3. **Industrial control**: In industrial automation control systems, ELM36403EA-S-VB can be used to control negative voltage loads, such as solenoid valves and relays, to provide stable switching functions for the system.
4. **Consumer electronics**: In consumer electronic devices, this MOSFET can be used for negative power management and current switching, such as for small load control, to provide a reliable switching solution.
5. **Communication equipment**: In communication equipment, the ELM36403EA-S-VB is suitable for the switching and protection circuits of negative voltage power supplies, ensuring stable operation of the equipment under negative voltage.
Overall, the low on-resistance and excellent negative voltage handling capability of the ELM36403EA-S-VB make it an ideal choice for negative voltage switching and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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