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ELM36401EA-S-VB Product details
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ELM36401EA-S-VB MOSFET Product Introduction
The ELM36401EA-S-VB is a high-performance P-channel MOSFET in a SOT23-6 package. The MOSFET has a drain-source voltage (VDS) of -30V and a gate voltage (VGS) operating range of ±20V. Manufactured using Trench technology, the ELM36401EA-S-VB provides excellent conduction performance, with an on-resistance of 54mΩ and 49mΩ at a gate voltage of 4.5V and 10V, respectively. Its drain current (ID) can reach -4.8A, making it an excellent performer in applications that require high performance and miniaturization.
The ELM36401EA-S-VB is a high-performance P-channel MOSFET in a SOT23-6 package. The MOSFET has a drain-source voltage (VDS) of -30V and a gate voltage (VGS) operating range of ±20V. Manufactured using Trench technology, the ELM36401EA-S-VB provides excellent conduction performance, with an on-resistance of 54mΩ and 49mΩ at a gate voltage of 4.5V and 10V, respectively. Its drain current (ID) can reach -4.8A, making it an excellent performer in applications that require high performance and miniaturization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The characteristics of the ELM36401EA-S-VB make it widely used in multiple fields and modules:
1. **Power management**: Due to its low on-resistance and high current capability, the ELM36401EA-S-VB is well suited for power switching applications. Especially in scenarios where efficient switching and protection are required, such as power management modules and load switches, it can effectively reduce power consumption and improve system efficiency.
2. **Portable devices**: In portable electronic devices such as smartphones and tablets, this MOSFET is suitable for space-constrained power management circuits due to its miniaturized SOT23-6 package. Its efficient switching performance helps improve the battery life and overall energy efficiency of the device.
3. **Load switch**: The ELM36401EA-S-VB can be used in load switching applications, especially in scenarios where negative voltage loads need to be controlled. Its low on-resistance and good current handling capability make it an efficient load switching solution.
4. **Overcurrent protection**: This MOSFET can be used in an overcurrent protection circuit to protect the circuit by fast switching control to prevent damage caused by overload or short circuit conditions, ensuring stable operation and safety of the system.
With its compact package and efficient performance, ELM36401EA-S-VB provides a high-quality solution for modern electronic design, especially in power management and protection functions, and can meet a variety of application requirements.
The characteristics of the ELM36401EA-S-VB make it widely used in multiple fields and modules:
1. **Power management**: Due to its low on-resistance and high current capability, the ELM36401EA-S-VB is well suited for power switching applications. Especially in scenarios where efficient switching and protection are required, such as power management modules and load switches, it can effectively reduce power consumption and improve system efficiency.
2. **Portable devices**: In portable electronic devices such as smartphones and tablets, this MOSFET is suitable for space-constrained power management circuits due to its miniaturized SOT23-6 package. Its efficient switching performance helps improve the battery life and overall energy efficiency of the device.
3. **Load switch**: The ELM36401EA-S-VB can be used in load switching applications, especially in scenarios where negative voltage loads need to be controlled. Its low on-resistance and good current handling capability make it an efficient load switching solution.
4. **Overcurrent protection**: This MOSFET can be used in an overcurrent protection circuit to protect the circuit by fast switching control to prevent damage caused by overload or short circuit conditions, ensuring stable operation and safety of the system.
With its compact package and efficient performance, ELM36401EA-S-VB provides a high-quality solution for modern electronic design, especially in power management and protection functions, and can meet a variety of application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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